锑化物中/中波双色红外探测器研究进展

张宏飞; 朱旭波; 李墨; 姚官生; 吕衍秋

锑化物中/中波双色红外探测器研究进展

张宏飞^1,,
朱旭波^{2, 3, 4},
李墨^{2, 3, 4},
姚官生^{2, 3, 4},
吕衍秋^{2, 3, 4}

1.
陆装驻洛阳地区航空军代室, 河南洛阳 471009
2.
中国空空导弹研究院, 河南洛阳 471099
3.
红外探测器技术航空科技重点实验室, 河南洛阳 471099
4.
河南省锑化物红外探测器工程技术中心, 河南洛阳 471099

基金项目:

航空科学基金项目 20200024012002

详细信息

作者简介:
张宏飞（1980-），男，工程师，主要从事武器装备质量监督及进展研究。E-mail：zhf2313@163.com

中图分类号: TN215
计量
- 文章访问数: 247
- HTML全文浏览量: 61
- PDF下载量: 107
- 被引次数: 0
出版历程
- 收稿日期: 2021-10-23
- 修回日期: 2021-11-23
- 刊出日期: 2022-09-20

Research Progress of Mid-/Mid-Wavelength Dual-color Antimonide-based Infrared Detector

ZHANG Hongfei^1
,,
ZHU Xubo^{2, 3, 4},
LI Mo^{2, 3, 4},
YAO Guansheng^{2, 3, 4},
LYU Yanqiu^{2, 3, 4}

1.
Aviation Military Representative Office of Army Armament Department in Luoyang, Luoyang 471099, China
2.
China Airborne Missile Academy, Luoyang 471099, China
3.
Aviation Key Laboratory of Science and Technology on Infrared Detector, Luoyang 471099, China
4.
The Engineering Center for Antimonide-based Infrared Detector Research of Henan Province, Luoyang 471099, China

摘要

摘要: 面对第三代红外探测器对多波段探测的需求，中/中波双色同时获取两个波段的目标信息，对复杂的背景进行抑制，可以有效排除干扰源的影响，提高了探测的准确性，增强了在人工及复杂背景干扰下的目标识别能力，因此中/中波双色探测器设计和制备最近快速发展起来。锑化铟红外探测器通过分光可实现两个中波波段的探测，锑化物Ⅱ类超晶格探测器通过能带结构设计实现多波段探测。本文阐述了锑化物中/中波双色红外探测器的主要技术路线和目前研究进展，与传统InSb双色探测器相比，中/中波双色超晶格红外器件用于红外成像探测具有鲜明的特点和优势，但需要在探测器结构设计、锑化物超晶格材料生长、阵列器件制备等方面进行进一步研究，以提高探测性能，满足工程化应用需求。
- 双色 /
- 红外探测器 /
- 锑化物 /
- Ⅱ类超晶格 /
- 中/中波
Abstract: To meet the demand for third-generation infrared detectors in multi-band detection, a mid-/mid-wavelength dual-color detector can obtain target information in two bands simultaneously and suppress complex background; hence, it can effectively eliminate the influence of interference sources and improve the accuracy of detection, which enhances target recognition under artificial and complex background interference. The design and preparation of mid-/mid-wavelength dual-color detectors have recently developed rapidly. The InSb infrared detector can realize the detection of the mid-/mid-wavelength via light splitting, and the antimonide type-II superlattice detector realizes multi-band detection through the energy band structure design. This paper describes the main technical method and current research progress of antimonide mid-/mid-wavelength dual-color infrared detectors. Compared with traditional InSb dual-color detectors, mid-/mid-wavelength dual-color superlattice infrared devices have distinct characteristics and advantages for infrared imaging detection. However, further research on detector structure design, antimonide superlattice material growth, and array device preparation is required to improve the detection performance and meet the demands of engineering applications.
- dual-color /
- infrared detector /
- antimonide /
- type-II superlattice /
- mid-/mid-wavelength

HTML全文

图 1 N-P-N器件结构图：(a)顺序型和(b)同时型

Figure 1. Schematics of N-P-N sequential structure (a) and simultaneous structure (b)

下载: 全尺寸图片幻灯片

图 2 并列式中/中波双色红外探测器成像

Figure 2. A fisheye image of hybrid dual-color MWIR detector

下载: 全尺寸图片幻灯片

图 3 InSb中波双色红外探测器滤光片方案

Figure 3. Filter deposition pattern of InSb MWIR detector

下载: 全尺寸图片幻灯片

图 4 InAs/GaSb中波双色红外探测器滤光片方案

Figure 4. Filter deposition pattern of InAs/GaSb dual-color MWIR detector

下载: 全尺寸图片幻灯片

图 5 不同像元尺寸的双色超晶格阵列器件表面照片

Figure 5. Sections of completely processed dual-color InAs/GaSb FPA with different pixel pitch

下载: 全尺寸图片幻灯片

图 6 双色InAs/GaSb超晶格器件结构图

Figure 6. Schematic view of a dual-color InAs/GaSb SL detector pixel

下载: 全尺寸图片幻灯片

图 7 双色器件结构及互连示意图

Figure 7. Schematic view of dual-color InAs/GaSb SL detector

下载: 全尺寸图片幻灯片

图 8 niBin结构的双色超晶格材料能带图

Figure 8. The band structure of the niBin device

下载: 全尺寸图片幻灯片

表 1 各种锑化物中/中波双色红外焦平面探测器的性能参数

Table 1. Specification of Mid-/Mid-Wavelength dual-color infrared detector performance

Year	Country	Company or institute	Materials	Structure	Array format	Pixel Pitch/μm	Working waveband/μm	Peak Detectivity/ (cm⋅Hz^1/2⋅W^-1)	NETD/mK
2012	Israel	SemiConductor Devices (SCD)	InSb	Parallel	480×384	-	-	-	-
2017	Sweden	IRnova AB	InAs/GaSb	Flat	320×256	30	3.0-3.5 3.5-4.1	-	-
2006	Germany	Fraunhofer-Institute	InAs/GaSb	PIN Stack	384×288	40	3-4 4-5	-	29.5 16.5
2011	Germany	Fraunhofer-Institute	InAs/GaSb	PIN Stack	384×288	30	3-4 4-5	-	17.9 9.9
2015	China	Shanghai Institute of Technical Physics	InAs/GaSb	PIN Stack	320×256	30	3-4.2 4.2-5.5	6.0×10¹⁰ 2.3×10⁹	-
2015	China	Shanghai Institute of Technical Physics	InAs/GaSb	PIN Stack	640×512	30	3-4.5 4.5-5.8	7.73×10¹⁰ 7.81×10¹⁰	-
2017	China	Institute of Semiconductors	InAs/GaSb	niBin Stack	-	-	-	-	-

下载: 导出CSV

参考文献(26)

[1]	Rehm R, Walther M, Schmitz J, et al. Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range[J]. Electronics Letters, 2006, 42(10): 577-578. doi: 10.1049/el:20060878
[2]	李庆, 白杰, 吕衍秋, 等. 基于Pt/CdS与InSb光伏型紫外-红外焦平面探测器的双色探测机理[J]. 红外与毫米波学报, 2017, 36(4): 385-388. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201704001.htm LI Qing, BAI Jie, LV Yanqiu, et al. Analysis of ultraviolet and infrared dual-color focal-plane array detector based on Pt/CdS and InSb junctions[J]. J. Infrared Millim. Waves, 2017, 36(4): 385-388. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201704001.htm
[3]	胡伟达, 李庆, 陈效双, 等. 具有变革性特征的红外光电探测器[J]. 物理学报, 2019, 68(12): 120701. doi: 10.7498/aps.68.20190281 HU Weida, LI Qing, CHEN Xiaoshuang, et al. Recent progress on advanced infrared photodetectors[J]. Acta Phys. Sin. , 2019, 68(12): 120701. doi: 10.7498/aps.68.20190281
[4]	Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. Journal of Applied Physics, 1987, 62(6): 2545. doi: 10.1063/1.339468
[5]	孙姚耀, 韩玺, 吕粤希, 等. 基于InAs/GaSb二类超晶格的中/长波双色红外探测器[J]. 航空兵器, 2018, 4(2): 56-59. https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ201802010.htm SUN Yaoyao, HAN Xi, LYU Yuexi et al. Performance of dual-color mid-/long-wavelength infrared detectors based on Type-II InAs/GaSb superlattice[J]. Aero Weaponry, 2018, 4(2): 56-59. https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ201802010.htm
[6]	史衍丽. 锑基Ⅱ类超晶格红外探测器——第三代红外探测器的最佳选择[J]. 红外技术, 2011, 33(11): 621-624. doi: 10.3969/j.issn.1001-8891.2011.11.001 SHI Yanli. Type-II InAs/GaInSb superlattices infrared detectors-one of the best choices as the third generation infrared detectors[J]. Infrared Technology, 2011, 33(11): 621-624. doi: 10.3969/j.issn.1001-8891.2011.11.001
[7]	Razeghi M, Haddadi A, Hoang A M, et al. Antimonide-based type II superlattices: a superior candidate for the third ceneration of infrared imaging systems[J]. Journal of Electronic Materials, 2014, 43(8): 2802-2807. doi: 10.1007/s11664-014-3080-y
[8]	SUN Y, HAN X, HAO H, et al. 320×256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. Infrared Physics & Technology, 2017, 82: 140-143.
[9]	GUO C, JIANG Z, JIANG D, et al. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices[J]. Optical and Quantum Electronics, 2019, 51(3): 73.
[10]	Haddadi A, Dehzangi A, Chevallier R, et al. Bias-selectable nBn dual-band long-/very long-wavelength infrared photodetectors based on InAs/InAs_1−xSb_x/AlAs_1−xSb_x type–II superlattices[J]. Scientific Reports, 2017, 7(1): 3379.
[11]	刘武, 陈建新. InAs/GaSb II类超晶格红外探测技术研究进展[J]. 激光与红外, 2016, 46(6): 659-664. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201606003.htm LIU Wu, CHEN Jianxin. Research progress of InAs/GaSb type II superlattice infrared detection technique[J]. Laser & Infrared, 2016, 46(6): 659-664. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201606003.htm
[12]	李俊斌, 李东升, 杨玉林, 等. 以色列SCD公司的III-V族红外探测器研究进展[J]. 红外技术, 2018, 40(10): 936-945. http://hwjs.nvir.cn/article/id/hwjs201810003 LI Junbin, LI Dongsheng, YANG Yulin, et al. III-V semiconductor infrared detector research in SCD of Israel[J]. Infrared Technology, 2018, 40(10): 936-945. http://hwjs.nvir.cn/article/id/hwjs201810003
[13]	黄建亮, 张艳华, 曹玉莲, 等. 锑化物二类超晶格红外探测器[J]. 航空兵器, 2019, 26(2): 50-56. https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ201902008.htm HUANG Jianliang, ZHANG Yanhua, CAO Yulian, et al. Antimonide type II superlattice infrared detectors[J]. Aero Weaponry, 2019, 26(2): 50-56. https://www.cnki.com.cn/Article/CJFDTOTAL-HKBQ201902008.htm
[14]	GUO C, JIANG Z, JIANG D, et al. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices[J]. Optical and Quantum Electronics, 2019, 51(3): 73.
[15]	PENG R, JIAO S, JIANG D, et al. Dark current mechanisms and spectral response of SiO₂-passivated photodiodes based on InAs/GaSb superlattice[J]. Thin Solid Films, 2017, 629: 55-59.
[16]	Tribolet P, Destefanis G, Ballet P, et al. Advanced HgCdTe technologies and dual-band developments[C]//Infrared Technology and Applications XXXIV. International Society for Optics and Photonics, 2008, 6940: 69402P.
[17]	Eich D, Ames C, Breiter R, et al. MCT-based high performance bispectral detectors by AIM[J]. Journal of Electronic Materials, 2019, 48(10): 1-10.
[18]	Rogalski A. InAs/GaSb type-II superlattices versus HgCdTe ternary alloys: future prospect[C]//Electro-Optical and Infrared Systems: Technology and Applications XIV. International Society for Optics and Photonics, 2017, 10433: 104330U.
[19]	Hirsh I, Shkedy L, CHEN N, et al. Hybrid dual-color MWIR detector for airborne missile warning systems[C]//Proc. of SPIE, 2012, 8353: 83530H.
[20]	Greiner M., Davis M. Devitt J. et al. State of the art in large format IR FPA development at CMC electronics Cincinnati[C]//Proc. of SPIE, 2012, 5074: 60-71.
[21]	Höglund L, von Würtemberg R M, Gatty H, et al. Type-II InAs/GaSb superlattices for dual color infrared detection[C]//Quantum Sensing and Nano Electronics and Photonics XIV. International Society for Optics and Photonics, 2017, 10111: 1011116.
[22]	Rehm R, Walther M, Schmitz J, et al. Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range[J]. Electronics Letters, 2006, 42(10): 577-578.
[23]	Rehm R, Walther M, Rutz F, et al. Dual-color InAs/GaSb superlattice focal-plane array technology[J]. Journal of Electronic Materials, 2011, 40(8): 1738-1743.
[24]	白治中, 徐志成, 周易, 等. 320×256元InAs/GaSb Ⅱ类超晶格中波红外双色焦平面探测器[J]. 红外与毫米波学报, 2015, 34(6): 716-720. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201506015.htm BAI Zhizhong, XU Zhicheng, ZHOU Yi, et al. 320×256 dual -color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays[J]. J. Infrared Millim. Waves, 2015, 34(6): 716-720. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYH201506015.htm
[25]	白治中, 徐志成, 周易, 等. InAs/GaSb Ⅱ类超晶格中波红外双色640×512规模焦平面探测器[C]//2015年红外, 遥感技术与应用研讨会暨交叉学科论坛, 2015: 1-7. BAI Zhizhong, XU Zhicheng, ZHOU Yi, et al. 640×512 dual -color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays[C]//Infrared, Remote Sensing Technology and Application Seminar and Interdisciplinary Forum, 2015: 1-7.
[26]	HUANG J, MA W, ZHANG Y, et al. Two-colorni bin type II superlattice infrared photodetector with external quantum efficiency larger than 100%[J]. IEEE Electron Device Letters, 2017, 38(9): 1266-1269.