Research Progress of Quantum Dots Synthesis and Their Photoelectric Functional Films
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摘要: 量子点（quantum dots，QDs），也被称为半导体纳米晶体，得益于其廉价的制造成本和独特的光学物理学特性，已经广泛应用于光电探测器和太阳能电池的设计和开发。而量子点的合成则是制备光电探测器和太阳能电池的重要组成部分之一。本文对几种不同的量子点合成技术进行了概述，对国内外不同的基于量子点的光电探测器和太阳能电池进行了归纳和总结，并比较了不同种量子点薄膜的优缺点。最后，对量子点薄膜的发展进行了展望。Abstract: Quantum dots (QDs), which are also known as semiconductor nanocrystals, have been widely applied in the design and development of photoelectric detectors and solar cells because of their low manufacturing cost and unique optical properties. The synthesis of QDs is an important component in the preparation of photodetectors and solar cells. In this review, several different QD synthesis technologies, various QD-based photodetectors and solar cells are summarized, and the advantages and disadvantages of different types of QD films are compared. Lastly, we investigated the development of QD films.
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Key words:
- quantum dots /
- quantum dots film /
- photodetectors /
- solar cells
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图 1 胶体量子点的吸收光谱及不同类型的量子点材料: (a) 不同尺寸 PbS CQDs的太阳光谱及光吸收示意图[4]；(b) 用于光电探测的不同类型的CQDs[29]
Figure 1. Absorption spectrum of CQDs and different types of CQDs materials: (a) Solar spectrum and schematic diagram of the light absorption of PbS CQDs of varying sizes[4]; (b) Different types of CQDs which applied in photodetection[29]
图 2 反相微乳液法制备纳米晶体及其性质: (a) W/O型微乳液体法示意图；(b)和(c)不同煅烧温度下氧化锆纳米颗粒的TEM图像[36]；(d)含水氧化锆颗粒的TEM图像[37]；(e)和(f)具有不同水与活性剂摩尔比的A12O3纳米颗粒的TEM图像[38]；(g) PbS CQDs的TEM图像[39]；(h) PbS CQDs的粒径分布直方图[39]；(i) PbS CQDs的XPS图谱[39]
Figure 2. Preparation of nanocrystals by reverse phase microemulsion method and their properties: (a) Schematic diagram of W/O microemulsion method; (b) and (c) TEM images of zirconia nanoparticles calcined at 650℃ and 750℃ for 1 h[36]; (d) TEM image of hydrous-zirconia nanoparticles[37]; TEM images of Al2O3nanoparticles with different mole ratios of water to surfactant: (e) ωo=10[38], (f) ωo=15[38]; (g) TEM image of PbS CQDs[39]; (h) Histogram of particle size distribution of PbS CQDs[39]; (i) XPS pattern of the PbS CQDs[39]
图 3 正相微乳液法制备纳米晶体及其性质: (a) O/W型微乳液体法示意图；(b) Ag2Se纳米颗粒的TEM图像[42]；(c) Ag2Se纳米颗粒的EDs图谱[42]；(d) Ag2Se纳米颗粒的XRD图谱[42]；(e) CoCrFeO4纳米颗粒的TEM图像[43]；(f) CoCrFeO4纳米颗粒的XRD图谱[43]
Figure 3. Nanocrystals prepared by normal phase microemulsion method and their properties: (a) Schematic diagram of O/W microemulsion method; (b) TEM image of Ag2Se nanoparticles[42]; (c) EDs analyses of Ag2Se nanoparticles[42]; (d) XRD pattern of Ag2Se nanoparticles[42]; (e) TEM micrograph of CoCrFeO4nanoparticles with an average size of ~6nm[43]; (f) XRD pattern of 11-nm CoCrFeO4nanoparticles[43]
图 4 热注射法制备纳米晶体及其性质: (a) 热注射法合成CQDs技术示意图[46]；(b) Cu2FeSnS4纳米晶体的低分辨率TEM图像[47]；(c)和(d) ZnFe2O4纳米颗粒的TEM图像[48]；(e)和(f) CuSbS2纳米颗粒的TEM图像[49]；(g)-(i)不同升温速率下完全生长的钴纳米颗粒的TEM图像[50]
Figure 4. Preparation of nanocrystals by thermal injection and their properties: (a) Schematic representation of the hot-injection CQDs synthesis technique[46]; (b) Low resolution TEM image of Cu2FeSnS4nanocrystals[47]; (c) and (d) TEM images of ZnFe2O4nano-particles[48]; (e) and (f) TEM images of CuSbS2nanoparticles[49]; (g)-(i) TEM images of full-grown Co nanoparticles with different temperature recovery rate (HI2: rapid temperature recovery, HI3: medium-rate recovery, HI4: slow recovery)[50]
图 5 量子点红外光电探测器及其性能: (a) HgTe CQDs光电探测器阵列[51]；(b) 不同尺寸HgTe CQDs的红外吸光度[51]；(c) HgSe CQDs红外光电探测器结构设计图[52]；(d) 不同尺寸HgSe CQDs的红外吸光度[52]；(e) Si/PbS CQDs光电探测器结构示意图[53]；(f)和(g) Si/PbS异质结的能带示意图[53]；(h) PbS CQDs光电探测器的响应率曲线图[54]；(i) PbS CQDs光电探测器的探测率曲线图[54]
Figure 5. Quantum dots infrared photodetectors and their performances: (a) Image of HgTe CQDs photodetectors array[51]; (b) IR absorbance of HgTe CQDs with different sizes[51]; (c) Structure scheme of HgSe CQD IR photodetector[52]; (d) IR absorbances for small and large HgSe CQD[52]; (e) Structure of the Si/PbS CQDs photodetector[53]; Energy band diagram of Si/PbS heterojunction: (f) Inverted heterojunction and (g) normal heterojunction[53]; (h) Responsivity curve of PbS CQDs photodetector[54]; (i) Detectivity curve of PbS CQDs photodetector[54
图 6 量子点光电二极管及其性能: (a) ITO/ZnO/PbSxSe1-xCQDs/Au光电二极管截面SEM图像[55]；(b) ITO/ZnO/PbSxSe1-xCQDs/Au光电二极管的I-V特性稳定性测试结果[55]；(c) Au/PbS CQDs/ITO光电二极管结构示意图[56]；(d) Au/PbS CQDs/ITO光电二极管探测率曲线图[56]；(e) ITO/TiO2/HgTe CQDs/Au光电二极管结构示意图[57]；(f) ITO/TiO2/HgTe CQDs/Au光电二极管响应率曲线图和探测率直方图[57]；(g) ITO/ZnO/PbS CQDs/Au光电二极管结构示意图[58]；(h) ITO/ZnO/PbS CQDs/Au光电二极管瞬态测试结果快速上升和下降边缘组成部分的放大示意图[58]；(i) Ag2Se CQDs的吸收光谱和光致发光发射光谱[59]
Figure 6. Quantum dots photodiodes and their performances: (a) The SEM diagram of the cross-section of the ITO/ZnO/PbSxSe1-xCQDs/Au photodiode[55]; (b) Stability of I-V characteristics of ITO/ZnO/PbSxSe1-xCQDs/Au photodiode[55]; (c) Schematic of the Au/PbS CQDs/ITO photodiode structure[56]; (d) Detectivitie curve of the Au/PbS CQDs/ITO photodiode[56]; (e) Scheme of ITO/TiO2/HgTe CQDs/Au photodiode structure[57]; (f) Responsivity curve and detectivity histogram of ITO/TiO2/HgTe CQDs/ Au photodiode[57]; (g) Schematic of ITO/ZnO/PbS CQDs/Au photodiode structure[58]; (h) Zoom-in transient photocur- rent test showing components of fast rise and fall edges of ITO/ZnO/PbS CQDs/Au photodiode[58]; (i) Absorption spectrum and photoluminescence emission spectrum[59]
图 7 量子点太阳能电池及其性能: (a) SSLX PbS CQDs固体薄膜的AFM图像[60]；(b) LSLX PbS CQDs固体薄膜的AFM图像[60]；(c) ITO/ZnO/PbS QDs太阳能电池截面SEM图像[61]；(d) ITO/ZnO/PbS QDs太阳能电池的J-V曲线图[61]；(e) ITO/ZnO/PbSe QDs/PbS QDs/Au太阳能电池结构示意图[62]；(f) 不同浓度PbSe QDs油墨的胶体稳定性示意图[62]；(g) FTO/TiO2/PbS CQDs/Au太阳能电池结构示意图[63]；(h) FTO/TiO2/PbS CQDs/Au太阳能电池的PCE曲线图[63]；(i) ITO/ZnO/PbS CQDs/BHJ太阳能电池的J-V曲线图和PCE直方图[64]
Figure 7. Quantum dots solar cells and their performances: (a) AFM image of the SSLX PbS CQDs solid film[60]; (b) AFM image of the LSLX PbS CQDs solid film[60]; (c) SEM image of the cross-section of the ITO/ZnO/PbS QDs solar cell[61]; (d) J-V curves of ITO/ZnO/PbS QDs solar cell[61]; (e) Scheme of the ITO/ZnO/PbSe QDs/PbS QDs/Au solar cell architecture[62]; (f) Colloidal stability of PbSe QD inks with different concentrations[62]; (g) Schematic diagram of the FTO/TiO2/PbS CQDs/Au solar cell structure[63]; (h) Statistical distribution of PCEs for FTO/TiO2/PbS CQDs/Au solar cell[63]; (i) J-V curves and PCE histograms of ITO/ZnO/PbS CQDs/BHJ solar cell[64]
表 1 不同量子点光电探测材料体系及其探测器件的主要性能指标
Table 1. Different quantum dots photoelectric detection material systems and the main performance indexes of detectors
Method Device structure Area/
mm2Illumination/nm D*/
JonesR/(AW-1) Ref. Spin-coated Si/SiO2/MoS2/PbS-EDT/Ti/Au - 700 7×1014 6×105 [5] Si/SiO2/ZnO/QDs/TiO2/Al - 520 - 6.84×10-2 [6] PMMA/PAA/Poly-TPD: PCBM/CsPbBr3QD/ Poly-TPD: PCBM - 440-600 2.2×1011 8×10-2 [7] Si/SiO2/1L-MoS2/PbS QDs - 850 1×1011 5.4×104 [8] MoS2/TiO2/PbS - 635 5×1012 105 [9] Si(p-doped)/SiO2/TMDC/PbS CQD/Au - 1800 > 1012 1400 [10] Si/SiO2/ZnO/PbS/Al - 640 7.9×1012 10.9 [11] Si/SiO2/PbS/CH3NH3PbI3/Au 0.05 365 4.9×1013 - [12] Polyimide/ITO/HgTe CQDs/Au - 2200 7.5×1010 0.5 [13] Glass/ITO/NiO/PbS/ZnO/Al 4.6 600 1.2×1012 - [14] PbS-QD/InGaZnO - 1310 1012 104 [15] SiO2/Si/WSe2/PbS/Au - 970 7×1013 2×105 [16] Si/SiO2/ SnTe QDs/Ti/Au - 940 1.3×109 3.7 [17] Si/SiO2/ graphene/ PbS - 950/1450 7×1013 107 [18] Si/SiO2/MoS2/TiO2/HgTe CQDs - 2000 1012 106 [19] Si/SiO2/HgTe QDs/PMMA 0.048 5000 5.4×1010 - [20] Si/SiO2/Poly-TPD: PCBM/QDs/Poly-TPD: PCBM/Au PD - 400-800 3.8×1011 0.86 [21] Drop-casted Al/Si/Bi2Se3/HgTe CQDs/Graphene/Au - 2400 5×109 0.9 [22] Si/SiO2/Gold mirror/HgTe CQDs 1.6 1550 109 1 [23] Si/SiO2/graphene/PbS QDs/Au - 895 - 1×107 [24] ITO/graphene: CdSe QDs/CdS nanorods/Ag - 530 6.85×1012 15.95 [25] Inkjet-printed Ag/ZnO/PbS ink 1 950 2×1012 1.5 [26] Nanoprinted Si/SiO2/graphene/PbS CQDs - 1280 ≥1010 - [27] Spray-casted MXene/PbS QDs - 470 2.4×1011 1.15×102 [28] 
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