Comparative Study on Readout Circuit for Graphene and Typical Photoconductors Photodetectors
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摘要: 石墨烯光电探测器具有兼容性好和宽波段响应等优势，其读出电路可类似于微测辐射热计等传统探测器。然而，石墨烯光电探测器一般属于光子型，其响应度、功耗和积分时间等具有显著差异。针对纯石墨烯、石墨烯-硫化铅异质结、硫化铅和典型微测辐射热计4种探测器，结合实测器件参数，进行读出电路的对比研究。仿真结果表明：由于其较高的响应度，实现相同的输出电压，石墨烯-硫化铅异质结探测器所需的积分时间最少，更利于高帧频应用。另一方面，与微测辐射热计相比，石墨烯探测器具有较高的功耗，而分析表明合理的器件结构设计可有效减小功耗。本文的研究工作可为二维材料等新型光电探测器的读出电路选择和参数设计提供参考。Abstract: Graphene-based photodetectors have the advantages of good compatibility and wide-band response, and their readout circuits are similar to traditional detectors such as bolometers. However, graphene photodetectors are generally photon types whose responsivity, power consumption, and integration time are significantly different. Here, the readout circuits of pure graphene, graphene-lead sulfide heterostructure, lead sulfide, and typical bolometer combined with the measured device parameters are studied. Simulation results show that because of its high responsivity, when the same output voltage is achieved, the integration time of the graphene-lead sulfide heterostructure detector is the lowest, which is more conducive to high-frame-rate applications. However, compared with the bolometer, the graphene detector has a higher power consumption, and the analysis shows that a reasonable device structure design can effectively reduce the power consumption. This study can provide a reference in the selection of the readout circuit and parameter design of a new type of two-dimensional material photodetector.
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Key words:
- graphene /
- photoconductive effect /
- readout circuit /
- photodetector
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图 1 两种探测器在激光照射下的电流曲线
Figure 1. Current curves of two detectors under laser irradiation
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[1] 任丽娜, 曲延滨. 毫米波与红外技术在军事领域中的应用[J]. 红外技术, 2004, 26(3): 66-70, 74. doi: 10.3969/j.issn.1001-8891.2004.03.015REN L N, QU Y B. The application of millimeter wave technology and infrared technology in the martial field[J]. Infrared Technology, 2004, 26(3): 66-70, 74. doi: 10.3969/j.issn.1001-8891.2004.03.015 [2] GUO N, HU W D, JIANG T, et al. High-quality infrared imaging with graphene photodetectors at room temperature[J]. Nanoscale, 2016, 8(35): 16065-16072. doi: 10.1039/C6NR04607J [3] YANG Q, WU Q M, LUO W, et al. InGaAs/graphene infrared photodetectors with enhanced responsivity[J]. Materials Research Express, 2019, 6(11): 116208. doi: 10.1088/2053-1591/ab4925 [4] FANG H, HU W. Photogating in low dimensional photodetectors[J]. Advanced Science, 2017, 4(12): 1700323. doi: 10.1002/advs.201700323 [5] Buscema M, Island J O, Groenendijk D J, et al. Photocurrent generation with two-dimensional van der waals semiconductors[J]. Chemical Society Reviews, 2015, 44(11): 3691-3718. doi: 10.1039/C5CS00106D [6] LI X M, ZHU H W, WANG K L, et al. Graphene-on-silicon schottky junction solar cells[J]. Advanced Materials, 2010, 22(25): 2743-2748. doi: 10.1002/adma.200904383 [7] WANG F, WANG Z X, YIN L, et al. 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection[J]. Chemical Society Reviews, 2018, 47(16): 6296-6341. doi: 10.1039/C8CS00255J [8] Lee I, KANG W T, Kim J E, et al. Photoinduced tuning of schottky barrier height in Graphene/MoS2 heterojunction for ultrahigh performance short channel phototransistor[J]. ACS Nano, 2020, 14(6): 7574-7580. doi: 10.1021/acsnano.0c03425 [9] Gerasimos K, Michela Badioli, Louis Gaudreau, et al. Hybrid graphene-quantum dot phototransistors with ultrahigh gain[J]. Nature Nanotechnology, 2012, 7(6): 363-368. doi: 10.1038/nnano.2012.60 [10] Avouris P. Graphene: electronic and photonic properties and devices[J]. Nano Letters, 2010, 10(11): 4285-4294. doi: 10.1021/nl102824h [11] Ryzhii V, Ryzhii M. Graphene bilayer field-effect phototransistor for terahertz and infrared detection[J]. Physical Review B, 2009, 79(24): 245311. doi: 10.1103/PhysRevB.79.245311 [12] 周云. 无TEC非制冷红外焦平面读出电路的研究[D]. 成都: 电子科技大学, 2013.ZHOU Y. Research on Tec_less Uncooled Infrared Focal Plane Readout Integrate Circuit[D]. Chengdu: University of Electronic Science and Technology of China, 2013. [13] 郑昕. PbS薄膜的制备及红外光敏性能的研究[D]. 成都: 电子科技大学, 2009.ZHEN X. Preparation of PbS thin films and study on infrared photosensitivity[D]. Chengdu: University of Electronic Science and Technology of China, 2009. [14] XIE C, WANG Y, ZHANG Z X, et al. Graphene/semiconductor hybrid heterostructures for optoelectronic device applications[J]. Nano Today, 2018, 19: 41-83. -
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