金掺杂碲镉汞红外探测材料及器件技术

宋林伟; 孔金丞; 李东升; 李雄军; 吴军; 秦强; 李立华; 赵鹏

金掺杂碲镉汞红外探测材料及器件技术

昆明物理研究所，云南昆明 650223

详细信息

作者简介:
宋林伟（1989-），男，硕士，工程师，主要从事红外材料与器件研究，E-mail：songlinwei0111@163.com

通讯作者:
孔金丞（1979-），男，博士，研究员，主要从事红外材料与器件研究，E-mail：kongjincheng@163.com

中图分类号: TN215
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- 被引次数: 0
出版历程
- 收稿日期: 2020-08-12
- 修回日期: 2020-09-05
- 刊出日期: 2021-02-20

Au-Doped HgCdTe Infrared Material and Device Technology

Kunming Institute of Physics, Kunming 650223, China

摘要

摘要: 采用金掺杂替代作为深能级缺陷中心的汞空位，可明显提高P型碲镉汞材料少子寿命，进而降低以金掺杂P型材料为吸收层n-on-p型碲镉汞器件的暗电流，明显提升了n-on-p型碲镉汞器件性能，是目前高灵敏度、高分辨率等高性能n-on-p型长波/甚长波以及高工作温度中波碲镉汞器件研制的一种技术路线选择。本文在分析评述金掺杂碲镉汞材料现有研究技术要点的基础上，结合昆明物理研究所目前的研究成果，总结了碲镉汞金掺杂相关工艺技术，重点分析了金掺杂对碲镉汞器件性能的影响。
- 碲镉汞(HgCdTe) /
- 金掺杂 /
- 少子寿命 /
- 暗电流 /
- 稳定性
Abstract: The minority carrier lifetime of p-type HgCdTe materials can be improved significantly by using Au atoms instead of Hg vacancies, which have been considered as deep-level energy recombination centers; consequently, the dark current of n-on-p HgCdTe devices reduced and performance improved. Further, Au doping is helpful for developing high-performance n-on-p LWIR/VLWIR and high operating temperature (HOT) MWIR HgCdTe infrared detectors with high resolution and high sensitivity. In this paper, Au-doped HgCdTe IR material and device technologies were reviewed. Critical processes and the effect of Au doping on the device properties were discussed as well.
- HgCdTe /
- Au doping /
- minority carrier lifetime /
- dark current /
- stability

HTML全文

图 1 不同器件结构下碲镉汞器件性能对比

Figure 1. The performance of HgCdTe detectors for various growth techniques and different diode structures

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图 2 Au掺杂碲镉汞材料退火前后Au原子分布对比

Figure 2. Depth distributions of Au atom concentration in Au-doped HgCdTe materials as rown and annealed in an Hg-rich state

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图 3 77 K下Au/Cu掺杂与V_Hg型P型材料不同载流子浓度下的少子寿命

Figure 3. Measured and calculated lifetimes as a function of carrier concentration at 77 K

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图 4 不同掺杂工艺中暗电流随温度变化曲线

Figure 4. Dark current versus temperature for different technologies

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图 5 Au、Cu掺杂中波器件的R₀A值随温度变化关系图

Figure 5. R₀A versus temperature for Au/Cu doped HgCdTe

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图 6 德国AIM公司中波高温器件技术路线

Figure 6. The technical route of AIM for high operating temperature detector

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