红外低辐射膜的设计、制备与表征

韩建龙; 邱桂花; 张瑞蓉; 王雯; 王益珂; 谭东东; 于名讯

红外低辐射膜的设计、制备与表征

1.
山东非金属材料研究所, 山东济南 250031
2.
陆装南京军代局泰安军代室, 山东泰安 271039

详细信息

作者简介:
韩建龙（1986-）男，高级工程师，主要从事可见光、红外、太赫兹等隐身材料与技术的研究。E-mail: jianlongmail@126.com

中图分类号: TN213
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- 文章访问数: 147
- HTML全文浏览量: 47
- PDF下载量: 37
- 被引次数: 0
出版历程
- 收稿日期: 2021-05-07
- 修回日期: 2021-06-16
- 刊出日期: 2022-03-20

Design, Preparation and Characterization of Infrared Low-Emissivity Film

1.
Shandong Non-metallic Materials Institute, Ji'nan 250031, China
2.
Tai'an Military Representative Office of Army Equipment Department, Tai'an 271039, China

摘要

摘要: 为了降低红外探测技术对军事目标生存能力的威胁，研制了红外低辐射膜。设计并制备了基于一维光子晶体结构的红外低辐射膜，通过结构参数优化，改善了其红外波段反射性能，并降低了薄膜总厚度。采用红外椭偏仪测试了原材料Ge膜和ZnS膜的厚度和折射率，将测试结果带入设计结构，制备了8~12 μm发射率分别为0.045、0.097、0.174和0.346的红外低辐射膜。研究结果表明，通过结构优化，可制备出不同发射率的红外低辐射膜，满足武器装备不同辐射背景下的红外隐身要求。
- 一维光子晶体 /
- 红外低辐射膜 /
- 椭圆偏振测量 /
- 红外反射率 /
- 红外发射率
Abstract: Military targets require infrared (IR) stealth performance because of the rapid development of IR detection technology. In this study, an IR low-emissivity film based on a one-dimensional photonic crystal structure was designed and fabricated. The IR reflectance of the low-emissivity film was improved, and the total thickness of the film was reduced by optimizing its construction parameters. The thickness and optical parameters of the Ge and ZnS film prepared via vacuum evaporation were tested using an IR ellipsometer. The IR low-emissivity films with IR emissivities of 0.045, 0.097, 0.174, and 0.346 were prepared via vacuum evaporation after the optimized test results were incorporated into the crystal structure design. The IR reflectivity of the IR low-emissivity films was measured using a Fourier-transform IR spectrometer. The test results agreed well with the calculated results.
- one-dimensional photonic crystal /
- infrared low-emissivity film /
- elliptical polarization test /
- infrared reflectivity /
- infrared emittance

HTML全文

图 1 一维光子晶体材料的结构模型

Figure 1. Structural model of one-dimensional photonic crystals

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图 2 光子禁带与反射光谱对比图

Figure 2. Comparison of photon band gap and reflection spectrum

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图 3 红外低辐射膜剖面示意图

Figure 3. Section diagram of infrared low-emissivity film

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图 4 红外低辐射膜的理论反射光谱

Figure 4. Theoretical reflection spectrum of infrared low-emissivity film

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图 5 不同厚度的红外低辐射膜的理论反射光谱

Figure 5. Theoretical reflection spectrum of infrared low-emissivity film with different thickness

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图 6 锗膜（a）和硫化锌膜（b）的拟合结果与测试结果对比图

Figure 6. Comparison between fitting results and test results of Ge film (a) and ZnS film (b)

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图 7 Ge膜（a）和ZnS膜（b）的折射率

Figure 7. Refractive index of Ge film (a) and ZnS film (b)

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图 8 修正后红外低辐射膜理论反射光谱

Figure 8. Theoretical reflection spectrum of revised infrared low-emissivity film

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图 9 红外低辐射膜样品照片

Figure 9. Photos of infrared low-emissivity film samples

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图 10 制备的红外低辐射膜的反射光谱

Figure 10. Reflection spectrum of the prepared infrared low-emissivity film

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表 1 不同厚度的红外低辐射膜的理论红外性能

Table 1. Theoretical infrared performance of infrared low-emissivity film with different thickness

Number of layers	Total thickness /μm	8-14 μm theoretical average reflectivity	Relative value of thickness reduction	Relative value of theoretical average reflectivity reduction
16	15.9	98.7%	25.4%	0.9%
13	11.35	98.1%	46.7%	1.5%
7	6.98	90.9%	67.2%	8.7%
3	2.41	82.4%	88.7%	17.3%
1	0.63	67.4%	97.0%	32.3%

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表 2 制备的Ge膜和ZnS膜停镀点和tooling值

Table 2. Stop coating point and tooling value of prepared Ge film and ZnS film

Material	Equipment input thickness/kA	Stop coating thickness/kA	Test thickness/kA	Thickness difference/%	Tooling value
Ge	5.000	5.013	5.164	3.01	1.030
ZnS	9.000	9.027	7.854	12.99	0.870

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表 3 8~14 μm理论与实测平均反射率对比表

Table 3. Comparison of 8-14 μm theoretical and measured average reflectivity

Number of layers	Total thickness/μm	Theoretical average reflectivity	Measured average reflectivity	Average reflectivity difference
24	21.4	99.6%	98.2%	-1.4%
7	6.98	90.9%	89.3%	-1.6%
3	2.41	82.4%	80.1%	-2.3%
1	0.63	67.4%	68.7%	-1.3%

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表 4 在8~12 μm波段理论设计结果、反射光谱测试结果和发射率测试结果对比表

Table 4. Comparison between theoretical design results, reflection spectrum test results and emissivity test results in 8-12 μm

Number of layers	Total thickness/μm	Design average reflectivity	Test average reflectivity	Theoretical emissivity	Measured emissivity	Difference between theoretical and measured emissivity
24	21.4	99.7%	98.2%	0.018	0.045	0.027
7	6.98	90.5%	91.2%	0.088	0.097	0.009
3	2.41	84.7%	83.9%	0.161	0.174	0.013
1	0.63	68.1%	68.7%	0.313	0.346	0.033

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