Surface Quality of InSb Wafer Using Different Polishing Methods
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摘要: 本文分别以加双氧水的化学机械抛光和未加双氧水的纯机械抛光方式对InSb晶片进行表面处理，通过分析氧化膜的生成，以及对InSb晶片的表面划痕、表面粗糙度和表面损伤的表征，开展了两种不同抛光方式下InSb晶片的表面质量对比研究。结果表明，在化学机械抛光过程中，InSb晶片表面有氧化层生成，该氧化层能保护材料表面免受损伤；并且发现加入双氧水作为抛光液的化学机械抛光方法能够获得较好表面质量的InSb晶片，其表面几乎无划痕，粗糙度降至0.606 nm，平整度约6.916 nm，且表面损伤明显降低。Abstract: In this study, InSb wafers were subjected to pure mechanical polishing and chemical mechanical polishing using hydrogen peroxide. The surface quality of the wafers polished using these methods was investigated by characterizing the surface scratch, surface roughness, and surface damage and verifying if an oxide film was formed on the wafer surface. The results showed that an oxide layer was formed on the wafer surface during mechanical polishing. This layer protects the material surface from damage. Moreover, chemical mechanical polishing using hydrogen peroxide as the polishing solution facilitated the formation of InSb wafers with good surface quality. The surface roughness was reduced to 0.606 nm, the flatness was about 6.916 nm, and the damage was significantly reduced.
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Key words:
- InSb /
- surface quality /
- polishing /
- oxide layer /
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图 1 InSb晶片在不同抛光液中的交流阻抗谱
Figure 1. Nyquist diagram of InSb wafers in different polishing solutions
图 2 显微镜暗场InSb晶片表面形貌
Figure 2. Surface morphology of InSb wafer by dark field of microscope
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