铟砷锑红外探测器的研究进展

陈冬琼; 杨文运; 邓功荣; 龚晓霞; 范明国; 肖婷婷; 尚发兰; 余瑞云

铟砷锑红外探测器的研究进展

昆明物理研究所, 云南昆明 650223

基金项目:

云南省中青年学术和技术带头人后备人才项目 202205AC160054

详细信息

作者简介:
陈冬琼（1989-），女，博士研究生，研究方向是光电材料与器件。E-mail: dqchensci@163.com

通讯作者:
杨文运（1968-），男，研高工，研究方向是光电材料与器件。E-mail: yangwenyun@olied.com

中图分类号: TN216
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出版历程
- 收稿日期: 2021-01-22
- 修回日期: 2021-06-16
- 刊出日期: 2022-10-20

Research Progress of InAsSb Infrared Detectors

Kunming Institute of Physics, Kunming 650223, China

摘要

摘要: InAs_1－xSb_x属于Ⅲ-Ⅴ族化合物半导体合金材料，随Sb组分含量的不同，室温下可覆盖3~12 μm波长，并且InAsSb材料具有载流子寿命长、吸收系数大、载流子迁移率高等优点，是一种具有广阔应用前景的红外光电材料。探测器可以在150 K甚至近室温下工作，具有较高的灵敏度和探测率，是低功耗、小型化、高灵敏度和快响应中长波红外探测系统的良好选择，InAsSb中长波红外探测器受到广泛的关注和研究。本文首先简要概述了InAsSb材料的基本性质。其次，对国内外InAsSb红外探测器发展状况进行了介绍。最后，对InAsSb红外探测技术的发展进行了总结与展望。
- 红外探测器 /
- InAsSb /
- 高工作温度
Abstract: The cut-off wavelength of the spectral responses of the Ⅲ-Ⅴ semiconductor alloys InAs_1-xSb_x can be changed from 3 to 12 μm by tuning the relative amount of antimony in the alloy at room temperature. In addition, with longer carrier lifetime, higher optical absorption coefficient and higher carrier mobility can be achieved. InAsSb is a type of prospective MWIR and LWIR detector material that has potential applications. InAsSb detector can work at 150 K even at near room temperature with higher sensitivity and detectivity. Hence, it is one of the best choices for low-power, miniaturized, low-cost, highly sensitive, and fast-response MWIR and LWIR detection systems. InAsSb detectors have been widely studied and developed. In this paper, the fundamental material properties are described. Next, the status of the InAsSb infrared photodetectors domestic and abroad is introduced. Finally, the development of the InAsSb infrared detection technology is summarized and prospected.
- infrared photodetector /
- InAsSb /
- high operation temperature

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图 1 InAs_1-xSb_x禁带宽度（E_g）与其成分（x）的关系曲线：(a) 低温；(b) 室温

注：实线所示是文献[8-16]报道的实验数据，C为能带弯曲系数

Figure 1. InAs_1-xSb_x bandgap versus antimony composition for: (a) Low temperature; (b) Room temperature

Note: Experimental data from the literature are shown as solid symbols. The bandgap bowing parameters C, are noted

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图 2 InAs_1－xSb_x带边与其成分x的关系曲线

Figure 2. InAs_1-xSb_xconduction and valence band edges versus antimony composition

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图 3 (a) 光电探测器截面结构示意图（不按实际比例），右边的插图是一个350 μm正方形台面结构的光学显微镜图；(b) 室温零偏压下结构的能带结构示意图^[45]

Figure 3. (a) Cross-section schematic of the photodiode(not to real scale), The right inset is the microscope of the device; (b) Schematic energy band diagram of the photodiode^[45]

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图 4 nBn结构器件：(a) 能带图；(b) 普通（实线）与nBn器件（虚线）暗电流温度特性理论曲线^[46]

Figure 4. nBn detector: (a) Band edge diagram of the nBn architecture; (b) Schematic Arrhenius plot of temperature dependence of the dark current in standard diode and nBn photodetector^[46]

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图 5 长波势垒探测器异质结的能带结构示意图：(a) 导带和价带能级；(b) 偏置电压下能带分布，少子（空穴），箭头表示少子空穴输运方向^[55]

Figure 5. Schematic band diagrams of the barrier detector heterostructure: (a) conduction and valence band energies; (b) energy band profile under the operating bias, the direction of the minority hole transport being shown with an arrow^[55]

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图 6 InAsSb势垒型异质结^[56]：(a) 器件结构；(b) 能带示意图

Figure 6. InAsSb barrier heterojunction^[56] (a) Device structure; (b) Conduction and valence band energies

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图 7 XCBn结构器件：(a) 器件结构；(b) 仿真得到能带图^[68]；(c) 150-205 K焦平面器件热成像图^[68]

Figure 7. XCBn photodetector: (a) Device structure; (b) Energy bandgap diagram^[68]; (c) Example images taken with the InAsSb MWIR FPA operating from 150 to 205 K^[68]

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表 1 国外InAs_1－xSb_x红外探测器研究结果

Table 1. Research results of InAs_1－xSb_x infrared detectors abroad

Research institute	x	Structure	Temp./K	λ_cut-off /μm	J_dark/(A/cm²)	D*/(cmHz^1/2/W)	NETD/mK	Ref
SCD	0.09	nB_nn or C_pB_nn	150	4.2	< 10^-6	-	< 25	[34]
DRS HRL	0.195	nBn	150	4.9	10^-5	1.2×10¹¹	44	[35]
JPL	0.08	QD-BIRD	175	6.5	3.77×10^-4	1.07×10¹¹	-	[36]
JPL	0.085	nBn	300	4.5	1.6	1×10⁹	-	[37]
VIGO	0.19	p⁺B_pin⁺ or p⁺B_ppn⁺	230	5.3	0.13	-		[38]
VIGO	0.7	p⁺B_ppn⁺	300	14.2	-	-	-	[39]
Stony Brook university	0.4	nBn	77	10	5×10^-4	4×10¹⁰	-	[40]
Nanyang Technological University	0.09	p-i-n	300	5	2.62	8.9×10⁸	-	[41]

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参考文献(68)

[1]	Wooley J C, Smith B A. Solid solution in Ⅲ-Ⅴ compounds[C]//Proc. of SPIE, 1958, 72: 214-223.
[2]	Wooley J C, Warner J. Preparation of InAs-InSb Alloys[J]. Canadian Journal of Physics, 1964, 111: 1142-1145.
[3]	Wooley J C, Warner J. Optical energy-cap variation in InAs-InSb alloys[J]. Canadian Journal of Physics, 1964, 42: 1879-1885. doi: 10.1139/p64-176
[4]	Joel M Fastenau, Dmitri Lubyshev, QIU Yueming, et al. Sb-based IR photodetector epi wafers on 100 mm GaSb substrates manufactured by MBE[J]. Infrared Physics & Technology, 2013, 59: 158-162.
[5]	Denghy H Y, Hong X K, Fag W Z, et al. Microstructure characterization of InAs_0.93Sb_0.07 films grown by ramp-cooled liquid phase epitaxy[J]. Materials Characterization, 2007, 58(3): 307-311. doi: 10.1016/j.matchar.2006.05.009
[6]	Tian Z B, Schuler-Sandy T, Godoy S E, et al. High-operating-temperature MWIR detectors using type Ⅱ superlattices[C]//Proc. of SPIE, 2013, 8867: 88670S.
[7]	Manijeh Razeghi, Siamak Abdollahi Pour, Edward Huang, et al. High operating temperature MWIR photon detectors based on type Ⅱ InAs/GaSb superlattice[C]//Proc. of SPIE, 2011, 8012: 80122Q.
[8]	Smith S N, Phillips C C, Thomas R H, et al. Interband magneto-optics of InAs_1-xSb_x Semicond[J]. Sci. Technol. , 1992(7): 900-906.
[9]	Balenky G, Donetsky D, Kipshidze G, et al. Properties of unrelaxed InAs_1-xSb_x alloys grown on compositionally graded buffers[J]. Applied Physics Letters, 2011, 99(14): 141116. doi: 10.1063/1.3650473
[10]	Webster P T, Riordan N A, LIU S, et al. Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy[J]. J. Appl. Phys. , 2015, 118(24): 245706. doi: 10.1063/1.4939293
[11]	Suchalkin S, Ludwig J, Belenky G, et al. Electronic properties of unstrained unrelaxed narrow gap InAs_xSb_1−x alloys[J]. J. Phys. D. Appl. Phys. , 2016, 49(10): 105101. doi: 10.1088/0022-3727/49/10/105101
[12]	Osbourn G C. InAsSb strained-layer superlattices for long wavelength detector applications[J]. J. Vac. Sci. Technol, 1984, B2(2): 176-178.
[13]	FANG Z M, MA K Y, JAW D H, et al. Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy[J]. Journal of Applied Physics, 1990, 67: 7034. doi: 10.1063/1.345050
[14]	Svensson S P, Sarney W L, Hier H. Band gap of InAs_1−xSb_x with native lattice constant[J]. Physical Review, 2012, B86: 245205.
[15]	Wieder H H, Clawson A R. Photo-electronic properties of InAs_0.07Sb_0.93 films[J]. Thin Solid Films, 1973, 15: 217-221. doi: 10.1016/0040-6090(73)90045-X
[16]	Thompson A G, Woolley J C. Energy-gap variation in mixed Ⅲ-Ⅴ alloys[J]. Canadian Journal of Physics, 1967, 45(2): 255-261. doi: 10.1139/p67-026
[17]	Ravindra N M, Srivastava V K. Temperature dependence of the energy gap in semiconductors[J]. J. Phys. Chem. Solids, 1979, 40: 791-793. doi: 10.1016/0022-3697(79)90162-8
[18]	LIN Youxi, WANG Ding, Donetsky Dmitry, et al. Conduction-and valence-band energies in bulk InAs_1−x Sb_x and type Ⅱ InAs_1−xSb_x/InAs strained-layer superlattices[J]. Journal of Electronic Materials, 2013, 42(5): 1-9.
[19]	Alexander Soibel, Cory J Hill, Sam A Keo, et al. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors[J]. Applied Physics Letters, 2014, 105(2): 023512. doi: 10.1063/1.4890465
[20]	Craig A P, Thompson M D, Tian Z-B, et al. InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low frequency noise performance[J]. Semiconnd. Sci. Technol., 2015, 30: 105011. doi: 10.1088/0268-1242/30/10/105011
[21]	Jen H R, Ma K Y, Stringefellow G B. Long range order in InAsSb[J]. Applied Physics Letters, 1989, 54: 1154-1159. doi: 10.1063/1.100746
[22]	Stradling R A. InSb-based materials for detectors[J]. Semicond Sci Technol., 1991, 6: C52-55. doi: 10.1088/0268-1242/6/12C/011
[23]	Kurtz S R, Dawson L D, Biefekl R M, et al. Ordering-induced band-gap reduction in InAs_1−xSb_x (x≈0.4) alloys and superlattices[J]. Physical Review B, 1992, 46(3): 1909-1912. doi: 10.1103/PhysRevB.46.1909
[24]	Su-Huai, Alex Zunger. InAsSb/InAs: A type-Ⅰ or a type-Ⅱ band alignment[J]. Physical Review B, 1995, 52: 12039-12044. doi: 10.1103/PhysRevB.52.12039
[25]	Elizabeth H Steenbergen, Oray O Cellek, Dmitri Lubyshev, et al. Study of the valence band offsets between InAs and InAs_1−xSb_x alloys[C]//SPIE, 2012, 8268: 82680K.
[26]	Webster P T, LIU S, Steenbergen E H, et al. Absorption properties of type-Ⅱ InAs/InAsSb superlattices measured by spectroscopic ellipsometry[J]. Applied Physics Letters, 2015, 106(6): 061907. doi: 10.1063/1.4908255
[27]	Rogalski A, Jozwikowski K. Intrinsic carrier concentration and effective mass in InAs_1−xSb_x[J]. Infrared Physics, 1989, 29(1): 35-42. doi: 10.1016/0020-0891(89)90006-7
[28]	Safa Kasap, Peter Capper. Handbook of Electronic and Photonic Materials[M]. 2^nd: Springer International Publishing: New York, USA, 2017.
[29]	Egan R J, Chin V W L, Tansley T L. Dislocation scattering effects on electron mobility in InAsSb[J]. J. Appl. Phys, 1994, 75(5): 2473-2476. doi: 10.1063/1.356244
[30]	Dixit V K, Bansal B, Venkataraman V, et al. Structural, optical and electrical properties of bulk single crystals of InAs_1−xSb_x grown by rotatory Bridgman method[J]. Applied Physics Letters, 2002, 81(9): 1630-1632. doi: 10.1063/1.1504163
[31]	YEN M Y. Molecular-beam epitaxial growth and electrical properties of lattice mismatched InAs_1−xSb_x on (100) GaAs[J]. J. Appl Phys. , 1988, 64(6): 3306-3309. doi: 10.1063/1.342492
[32]	Chyi J H, Kalem S, Kumar N S, et al. Growth of InSb and InAs_1−xSb_x on GaAs by molecular beam epitaxy[J]. Applied Physics Letters, 1988, 53(12): 1092-1094. doi: 10.1063/1.100031
[33]	Tsukamoto S, Bhattacharya P, Chen Y C, et al. Transport properties of InAs_xSb_1−x (0≤x≤0.55) on InP grown by molecular-beam epitaxy[J]. J. Appl. Phys., 1990, 67(11): 6819-6822. doi: 10.1063/1.345071
[34]	Yoram Karni, Eran Avnon, Michael Ben Ezra, et al. Large format 15 μm pitch XBn detector[C]//Proc. of SPIE, 9070: 90701F.
[35]	D'Souza A I, Robinson E, Ionescu A C, et al. InAsSb detector & FPA data and analysis[C]//Proc. of SPIE, 2014, 9100: 91000B.
[36]	David Z Ting, Sam A Keo, John K Liu, et al. Barrier infrared detector research at the jet propulsion laboratory[C]//Proc. of SPIE, 2012, 8511: 851104.
[37]	Alexander Soibel, Cory J Hill, Sam A Keo, et al. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors[J]. Infrared Physics & Technology, 2015, 70: 121-124.
[38]	Emilia Gomółka, Małgorzata Kopytko, Olga Markowska, et al. Electrical and optical performance of midwave infrared InAsSb heterostructure detectors[J]. Opt. Eng., 2018, 57(2): 027107.
[39]	Kubiszyn Ł, Michalczewskib K, Benyahiab D, et al. High operating temperature LWIR and VLWIR InAs_1−xSb_x optically immersed photodetectors grown on GaAs substrates[J]. Infrared Physics & Technology, 2018, 97: 116-122.
[40]	DING Wang, Dmitry Donetsky, Gela Kipshidze, et al. Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region[J]. Applied Physics Letters, 2013, 103: 0511201-05112013.
[41]	TONG Jinchao, Landobasa Y M Tobing, LI Qian, et al. InAs_0.9Sb_0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature[J]. J. Mater. Sci., 2018, 53: 13010-13017. doi: 10.1007/s10853-018-2573-0
[42]	Bubulac L O, Andrews A M, Gertner E R, et al. Backside-illuminated InAsSb/GaSb broadband detectors[J]. Applied Physics Letters, 1980, 36(9): 734-736. doi: 10.1063/1.91649
[43]	Kim J D, Mohseni H, Wojkowski J S, et al. Growth of InAsSb alloys on GaAs and Si substrate for uncooled infrared photodetector applications [C]//Proc. of SPIE, 1999, 3629: 338-344.
[44]	Chakrabarti P, Krier A, HUANG X L, et al. Fabrication and characterization of an InAs_0.96Sb_0.04 photodetector for MIR application[J]. IEEE Electron Device Letters, 2004, 25(5): 283-285. doi: 10.1109/LED.2004.826979
[45]	TONG Jinchao, Landobasa Y M Tobing, NI Peinan, et al. High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode[J]. Applied Surface Science, 2018, 427: 605-608. doi: 10.1016/j.apsusc.2017.08.177
[46]	Maimon S, Wicks G W. nBn detector, an infrared detector with reduced dark current and higher operating temperature[J]. Applied Physics Letters, 2006, 89(15): 151109. doi: 10.1063/1.2360235
[47]	Klipstein P, Klin O, Seve G, et al. MWIR InAsSb XBn detectors for high operating temperatures[C]//Proc. of SPIE on Infrared Technology and Applications XXXVI, 2008, 7660: 76602Y.
[48]	Klipstein P, Klin O, Seve G, et al. XBn barrier detectors for high operating temperatures[C]//Proc. of SPIE on Quantum Sensing and Nanophotonics Devices Ⅶ, 2010, 7608: 7608-65.
[49]	Alexander Soibel, Cory J Hill, Sam A Keo, et al. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors[J]. Infrared Physics & Technology, 2015, 70: 121-124.
[50]	Ionescu A C, Salcido M, T J de Lyon, et al. InAsSb detectors for visible to MWIR high operating temperature applications[C]//Proc. of SPIE, 2011, 8012: 80122S.
[51]	Martyniuk P, Antoni R. Theoretical investigation of properties of InAsSb mid-wave infrared detectors[C]//Proc. of SPIE, 2018, 10830: 108300U.
[52]	Martyniuk P, Antoni R. Modeling of InAsSb/AlAsSb nBn HOT detector's performance limit[C]//Proc. of SPIE, 2013, 8704: 87041X.
[53]	LIN Youxi, Donetsky Dmitry, WANG Ding, et al. Development of bulk InAsSb alloy and barrier heterostryctures for long-wave infrared detectors[J]. Journal of Electronic Materials, 2015, 44(10): 3360-3366. doi: 10.1007/s11664-015-3892-4
[54]	Gregory Belenky, WANG Ding, LIN Youxi, et al. Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications[J]. Applied Physics Letters, 2013, 102: 1111081.
[55]	WANG Ding, Donestsky Dmitry, Kipshidze Gela, et al. Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region[J]. Applied Physics Letters, 2013, 103: 0511201-0511203.
[56]	Kubiszyn Ł, Michalczewski K, Benyahia D, et al. High operation temperature LWIR and VLWIR InAs_1-xSb_x optically immersed photodetectors grown on GaAs substrate[J]. Infrared Physics & Technology, 2018, 12(25): 1-9.
[57]	Vinita Dahiya, Julia I Deitz, David A. Hollingshead, et al. Investigation of digital alloyed AlInSb metamorphic buffers[J]. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materiala, Processing, Measurement, and Phenomena, 2018, 36: 02D1111-02D1117.
[58]	Klipstein P C, Gross Y, Aronov D, et al. Low SWaP MWIR detector based on XBn focal plane array[C]//Proc. of SPIE, 2013, 8704: 87041S.
[59]	高玉竹, 龚秀英. 室温InAsSb长波红外探测器的研制[J]. 光电子激光, 2010, 21(12): 1751-1754. https://www.cnki.com.cn/Article/CJFDTOTAL-GDZJ201012003.htm GAO Yuzu, GONG Xiuying, WU Guanghui, et al. Fabrication of room temperature InAsSb infrared detector with long-wavelength[J]. Journal of Optoelectronics Laser, 2010, 21(12): 1751-1754. https://www.cnki.com.cn/Article/CJFDTOTAL-GDZJ201012003.htm
[60]	SUN Changhong, HU Shuhong, WANG Qiwei, et al. Single crystalline InAsSb grown on (100) InSb substrate by liquid phase epitaxy[C]//Proc. of SPIE, 2012, 8419: 1-5.
[61]	黄亮. 基于In、As、Ga、Sb的新型红外探测材料及器件的光谱研究[D]. 上海: 中国科学院上海技术物理研究所, 2014. HUANG Liang. Spectroscopic Research of New Infrared Detection Materials and Devices Based on In, As, Ga, Sb[D]. Shanghai: Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 2014.
[62]	宁振动. 锑化物红外探测材料的MOCVD生长及光电性能研究[D]. 哈尔滨: 哈尔滨工业大学, 2016. NING Zhendong. Research on MOCVD Growth and Opto-electric Characterization of Antimonide Infrared Detection Materials[D]. Harbin: Harbin Institute of Technology, 2016.
[63]	WANG Tingting, XIONG Min, ZHAO Yingchun, et al. Planar mid-infrared InAsSb photodetector grown on GaAs substrate by MOCVD[J]. Applied Physics Express, 2019, 12: 122009. doi: 10.7567/1882-0786/ab507c
[64]	REN Yang, HAO Ruiting, LIU Sijia, et al. High Lattice match growth of InAsSb based materials by molecular beam epitaxy[J]. Chin. Phys. Lett., 2016, 33(12): 1281021-1281023.
[65]	ZHANG Xuan, JIA Qingxuan, SUN Ju, et al. High-performance mid-wavelength infrared detectors based on InAsSb nBn design[J]. Chin. Phys. B, 2020, 29(6): 0685011-0685014.
[66]	谢浩. InAsSb中波室温红外探测器材料的LPE生长及其器件[D]. 上海: 中国科学院上海技术物理研究所, 2020. XIE Hao. LPE Growth and Device Fabrication of InAsSb Medium Wave Infrared Detector at Room Temperature[D]. Shanghai: Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 2020.
[67]	DENG Gongrong, YANG Wenyun, ZHAO Peng, et al. High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier[J]. Appl. Phys. Lett, 2020, 113: 031104.
[68]	DENG Gongrong, YANG Wenyun, GONG Xiaoxia, et al. High-performance uncooled InAsSb-based pCBn mid-infrared photo-detectors[J]. Infrared Physics & Technology, 2020, 105: 1032601-1032605. http://www.cnki.com.cn/Article/CJFDTotal-ZGWL202006080.htm