Dark Current of Aluminum Oxide Passivation Film BCMOS Sensor Increased by Low Energy Electron Bombardment
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摘要: 针对低能电子（电子能量为300~1500 eV）轰击引起氧化铝钝化层BCMOS（Back-thinned Complementary Metal-Oxide-Semiconductor，BCMOS）图像传感器暗电流增加问题，设计了电子轰击BCMOS图像传感器实验，经统计发现，对于厚度为10 nm的氧化铝钝化层BCMOS图像传感器，轰击能量大于600 eV时暗电流增加速率明显；轰击电子能量不超过1.5 keV时，暗电流存在最大值，约为12000 e－/pixel/s；电子轰击后的BCMOS图像传感器在电子干燥柜中静置时，其暗电流呈指数趋势下降。通过分析指出入射电子引起氧化铝钝化层与硅界面处缺陷态增加，是引起上述现象的主要原因。Abstract: This study designed a buried channel metal-oxide-semiconductor (BCMOS) image sensor experiment to address increased dark current caused by low-energy electron bombardment (300 eV to 1500 eV) on the alumina passivation layer. For a CMOS image sensor with a 10 nm alumina passivation layer, an increase in the dark current rate is obvious when the bombardment energy is greater than 600 eV. When the bombardment electron energy does not exceed 1.5 keV, the dark current has a maximum value of about 12000 e-/pixel/s. Finally, after electron bombardment, the dark current of the CMOS image sensor decreased exponentially when the sensor was placed in an electronic drying cabinet. The main reason for the above phenomenon is the increased defect states at the interface between alumina passivation layer and silicon caused by incident electrons.
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Key words:
- dark current /
- electron bombardment /
- back-thinned CMOS /
- aluminum oxide passivation film
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图 1 低能电子轰击BCMOS图像传感器测试设备
Figure 1. Low energy electron bombardment BCMOS image sensor test equipment
图 2 不同电压参数时BCMOS图像传感器暗电流变化曲线
Figure 2. Dark current variation curves of BCMOS image sensor under different voltage parameters
图 3 电子轰击样品大气环境静置后暗电流变化数据
Figure 3. Dark current data after standing in atmospheric environment
图 4 软X射线产生效率与入射电子能量关系
Figure 4. Relationship between soft X-ray generation efficiency and incident electron energy
表 1 不同电压条件轰击后暗电流监测值
Table 1. Dark current monitoring values after bombardment under different voltage conditions
Bombardment electron energy/eV Dark current/(e－/pixel/s) Dark current growth rate 1 300 157 4.7% 2 600 986 528.0% 3 900 3827 288.1% 4 1200 9815 156.5% 5 1500 12000 22.3% 
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[1] Mackay C D, Tubbs R N, Bell R, et al. Sub-electron readnoise at MHz pixel rates (A)[C]//Proceedings of SPIE, 2001, 4306: 289-298 [2] 辛福学. ICCD的光纤耦合技术[J]. 红外与激光工程, 2001, 30(3): 210-213. doi: 10.3969/j.issn.1007-2276.2001.03.014XIN Fuxue. Optical fiber coupling technique of ICCD[J]. Infrared and Laser Engineering, 2001, 30(3): 210-213. doi: 10.3969/j.issn.1007-2276.2001.03.014 [3] Benussi L, Fanti V, Frekers D, et al. A multichannel single-photon sensitive detector for high-energy physics: themegapixel EBCCD[J]. Nuclear Instruments and Methods in Physics Research A, 2000(442): 154-158. [4] 宋德, 石峰, 李野. 基底均匀掺杂下EBAPS电荷收集效率的模拟研究[J]. 红外与激光工程, 2016, 45(2): 0203002. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYJ201602008.htmSONG De, SHI Feng, LI Ye. Simulation of charge collection efficiency for EBAPS with uniformly doped substrate[J]. Infrared and Laser Engineering, 2016, 45(2): 0203002. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYJ201602008.htm [5] 刘亚宁, 桑鹏, 吕嘉玮, 等. 微型低功耗EBAPS相机技术[J]. 红外技术, 2019, 41(9): 810-818. http://hwjs.nvir.cn/article/id/hwjs201909003LIU Yaning, SANG Peng, LYU Jiawei, et al. Miniature low power consumption EBAPS camera technology[J]. Infrared Technology, 2019, 41(9): 810-818. http://hwjs.nvir.cn/article/id/hwjs201909003 [6] 刘虎林, 王兴, 田进寿, 等. 高分辨紫外电子轰击互补金属氧化物半导体器件的实验研究[J]. 物理学报, 2018, 67(1): 152-157. https://www.cnki.com.cn/Article/CJFDTOTAL-WLXB201801017.htmLIU Hulin, WANG Xing, TIAN Jinshou, et al. High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection[J]. Acta Physica Sinica, 2018, 67(1): 152-157. https://www.cnki.com.cn/Article/CJFDTOTAL-WLXB201801017.htm [7] 徐鹏霄, 唐光华, 唐家业, 等. EBCMOS混合型光电探测器研究[J]. 光电子技术, 2016, 36(4): 232-252. https://www.cnki.com.cn/Article/CJFDTOTAL-GDJS201604004.htmXU Pengxiao, TANG Guanghua, TANG Jiaye, et al. Review of EBCMOS Hybrid Photodetector[J]. Optoelectronic Technology, 2016, 36(4): 232-252. https://www.cnki.com.cn/Article/CJFDTOTAL-GDJS201604004.htm [8] Barbier R, Cajgfinger T, Calabria P, et al. A single-photonsensitive EBCMOS camera: The LUSIPHER prototype [J]. Nuclear Instruments and Methods in Physics Research A, 2011, 648(1): 266-274. doi: 10.1016/j.nima.2011.04.018 [9] 王生凯, 靳川, 乔凯, 等. 热处理对背照式CMOS传感器信噪比影响的实验研究[J]. 红外技术, 2016, 41(6): 585-590. http://hwjs.nvir.cn/article/id/hwjs201906015WANG Shengkai, JIN Chuan, QIAO Kai, et al. Impact of annealing temperature on SNR in backside illuminated CMOS[J]. Infrared Technology, 2016, 41(6): 585-590. http://hwjs.nvir.cn/article/id/hwjs201906015 [10] 乔凯, 王生凯, 程宏昌, 等. 表面钝化膜对BCMOS传感器电子敏感特性影响的实验研究[J]. 红外与激光工程, 2020, 49(4): 0418002. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYJ202004033.htmQIAO Kai, WANG Shengkai, CHENG Hongchang, et al. Experimental study on the electron sensitivity of BCMOS sensor influenced by surface passivation film[J]. Infrared and Laser Engineering, 2020, 49(4): 0418002. https://www.cnki.com.cn/Article/CJFDTOTAL-HWYJ202004033.htm [11] Nathan Eric Howard. Development of Techniques to Characterize Electron-bombarded Charge-coupled Devices[D]. Tucson: The University of Arizona, 2002. [12] Hundur Yakup, Guvenc Ziya B, Hippler Rainer. Dynamical analysis of sputtering at threshold energy range: modelling of Ar+Ni(100) collision system[J]. Chin. Phys. Lett., 2008, 25(2): 730-733. doi: 10.1088/0256-307X/25/2/102 [13] 刘恩科, 朱秉升, 罗晋生. 半导体物理学[M]. 北京: 电子工业出版社, 2011.LIU Enke, ZHU Bingsheng, LUO Jinsheng. The Physics of Semiconductors[M]. Beijing: Electronics Industry Press, 2011. -
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