[1]余连杰,邓功荣,苏玉辉. InAs/GaSbⅡ类超晶格与HgCdTe红外探测器的比较研究[J].红外技术,2012,34(12):683-689.
 YU Lian-jie,DENG Gong-rong,SU Yu-hui. Comparison of TypeⅡ InAs/GaSb Superlattices and HgCdTe Infrared Detectors[J].Infrared Technology,2012,34(12):683-689.
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 InAs/GaSbⅡ类超晶格与HgCdTe红外探测器的比较研究
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《红外技术》[ISSN:1001-8891/CN:CN 53-1053/TN]

卷:
34卷
期数:
2012年12期
页码:
683-689
栏目:
出版日期:
2012-12-20

文章信息/Info

Title:
 Comparison of TypeⅡ InAs/GaSb Superlattices and HgCdTe Infrared Detectors
文章编号:
1001-8891(2012)12-0683-07
作者:
余连杰12邓功荣1苏玉辉1
 1.昆明物理研究所;
2.微光夜视技术重点实验室
Author(s):
 YU Lian-jie12DENG Gong-rong1SU Yu-hui1
 1. Kunming Institute of Physics;
2. Science and Technology on Low-light- level Night Vision Laboratory
关键词:
 InAs/GaSbHgCdTeⅡ类超晶格红外探测器
Keywords:
 InAs/GaSbHgCdTetype II superlatticesinfrared detectors
分类号:
TN215
文献标志码:
A
摘要:
 HgCdTe、QWIP和InAs/GaSbⅡ类超晶格被公认是第三代红外焦平面探测器的首选。主要对比分析了HgCdTe和InAs/GaSbⅡ类超晶格红外探测器,InAs/GaSbⅡ类超晶格具有响应波段宽且精确可控、工作温度高、载流子寿命长、暗电流低和均匀性好等优点,使其在甚长波、多色以及非制冷红外焦平面阵列等方面具有广阔的发展应用前景。
Abstract:
 The HgCdTe photodiodes, quantum well infrared photodiodes(QWIP)and typeⅡ InAs/GaSb superlattice photodiodes have emerged as the first candidate for third generation infrared detectors. There are many advantages of typeⅡ InAs/GaSb superlattice photodiodes over the HgCdTe photodiodes, for example, a highly adjustable broad spectral response range, higher operating temperature, longer carrier lifetime, lower leakage current and greater uniformity. There will be potential applications in the future for typeⅡ InAs/GaSb superlattice photodiode in the very long wavelength infrared(VLWIR), multi-color and uncooled infrared Focal Plane Arrays.

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备注/Memo

备注/Memo:
收稿日期:2012-07-21.
作者简介:余连杰(1977-),男,安徽临泉人,博士研究生,高级工程师,主要研究方向为红外探测器。E-mail:lianjieyu@sina.com
基金项目:云南省应用基础研究面上项目,编号:2008CD176。
更新日期/Last Update: 2013-04-01