[1]曾戈虹.HgCdTe红外探测器性能分析[J].红外技术,2012,34(01):001-3.
 ZENG Ge-hong.Performance HgCdTe Infrared Detector at Different Temperatures[J].Infrared Technology,2012,34(01):001-3.
点击复制

HgCdTe红外探测器性能分析
分享到:

《红外技术》[ISSN:1001-8891/CN:CN 53-1053/TN]

卷:
34卷
期数:
2012年01期
页码:
001-3
栏目:
出版日期:
2012-12-31

文章信息/Info

Title:
Performance HgCdTe Infrared Detector at Different Temperatures
文章编号:
1001-8891(2012)01-0001-03
作者:
曾戈虹
昆明物理研究所,云南 昆明 650223
Author(s):
ZENG Ge-hong
Kunming Institute of Physics, Kunming 650023, China
关键词:
HgCdTe红外探测器第三代红外焦平面器件理论计算
Keywords:
HgCdTeInfrared Detector3rd generation IRFPAsTheoretical calculation
分类号:
TN215
文献标志码:
A
摘要:
根据碲镉汞材料的性能、碲镉汞红外探测器物理机理和基本器件模型,对截止波长为3?m、5?m、10.5 ?m的碲镉汞探测器,在不同工作温度下的探测率性能进行了理论计算。计算结果表明:碲镉汞探测器在短波、中波和长波三个主要红外波段均能满足第三代红外焦平面器件对灵敏度和工作温度的要求。
Abstract:
Based on materials properties and the physics of the HgCdTe detector, the device performance was calculated in terms of detectivity versus background temperatures with cut-off wavelength at 3, 5, and 10.5 ?m, respectively. The results show that the performance of HgCdTe detectors can meet the 3rd generation focal plane array requirements for sensitivity and working temperatures.?

参考文献/References:

[1] ?D. Long. Generation-recombination noise limited detectivities of impurity and intrinsic photoconductive 8-14 μm infrared detectors[J]. Infrared Physics, 1967, 7: 169.
[2] ?R. K. Willardson, A. C. Beer. Semiconductors and Semimetals[M]. Mercury Cadmium Telluride: Academic Press, 1981, 18.
[3] ?S. M. Sze. Physics of Semiconductor Devices[M]. New York: Wiley Interscience, 1969.
[4] ?J. I. Pankove. Optical Properties of Semiconductors[M]. New York: Dover, 1971.
[5] ?M. Henini, M. Razeghi. Handbook of Infrared Detection Technologies[M]. Elsevier, 2002.?

相似文献/References:

[1]高璇,郭涛,欧文,等.CMOS兼容的微机械热电堆红外探测器的设计[J].红外技术,2012,34(09):535.
 GAO Xuan,GUO Tao,OU Wen,et al.Design of Micromechanical Thermopile Infrared Detector Compatible with CMOS Process[J].Infrared Technology,2012,34(01):535.
[2]王忆锋,李培智,刘黎明,等.甚长波碲镉汞红外探测器的发展[J].红外技术,2012,34(07):373.
 WANG Yi-feng,LI Pei-zhi,LIU Li-ming,et al.Developments of Very Long Wavelength Mercury Cadmium Telluride Infrared Detectors[J].Infrared Technology,2012,34(01):373.
[3]张卫锋,张若岚,赵鲁生,等.InGaAs短波红外探测器研究进展[J].红外技术,2012,34(06):361.
 ZHANG Wei-feng,ZHANG Ruo-lan,ZHAO Lu-sheng,et al.Development Progress of InGaAs Short-wave Infrared Focal Plane Arrays[J].Infrared Technology,2012,34(01):361.
[4]段东,苏晓峰,黄思婕,等.中波凝视红外焦平面探测器性能参数的提取[J].红外技术,2012,34(02):084.
 DUAN Dong,SU Xiao-feng,HUANG Si-jie,et al.Capturing Parameter Value of the Medium Wave Area Array IRFPA Detector[J].Infrared Technology,2012,34(01):084.
[5]曾戈虹.红外光子探测器与热探测器性能分析[J].红外技术,2011,33(09):497.
 ZENG Ge-hong.Comparison of Infrared Photon and Thermal Detectors[J].Infrared Technology,2011,33(01):497.
[6]程有度,李立华,姬玉龙,等.红外傅里叶光谱仪用于红外探测器相对光谱响应曲线测试的几个问题 [J].红外技术,2013,35(12):813.[doi:10.11846/j.issn.1001_8891.201312013]
 CHENG You-du,LI Li-hua,JI Yu-long,et al.Some Problems for Measurement of the IR Detector’s? Relative Spectral Response Curve by IR Fourier Spectroscopy [J].Infrared Technology,2013,35(01):813.[doi:10.11846/j.issn.1001_8891.201312013]
[7]曾戈虹,史衍丽,庄继胜.Ⅱ类超晶格红外探测器的机理、现状与前景[J].红外技术,2011,33(06):311.
 ZENG Ge-hong,SHI Yan-li,ZHUANG Ji-sheng.Principles, Status and Prospect of Type Ⅱ Superlattice Infrared Detectors[J].Infrared Technology,2011,33(01):311.
[8]王忆锋,余连杰,田萦.Ⅱ类超晶格双光谱红外探测器光谱串音的量化分析计算[J].红外技术,2011,33(05):293.
 WANG Yi-feng,YU Lian-jie,TIAN Ying.Quantitative Analysis and Calculation of Spectral Crosstalk ofType II Superlattice Bispectral Infrared Detectors[J].Infrared Technology,2011,33(01):293.
[9]王忆锋.2013年的中国红外技术(上)[J].红外技术,2014,36(1):010.[doi:10.11846/j.issn.1001_8891.201401002]
 WANG Yi-feng.The Infrared Technology of China in 2013[J].Infrared Technology,2014,36(01):010.[doi:10.11846/j.issn.1001_8891.201401002]
[10]王忆锋.2013年的中国红外技术(中)[J].红外技术,2014,36(2):089.[doi:10.11846/j.issn.1001_8891.201402002]
 WANG Yi-feng.The Infrared Technology of China in 2013 Ⅱ[J].Infrared Technology,2014,36(01):089.[doi:10.11846/j.issn.1001_8891.201402002]
[11]余连杰,邓功荣,苏玉辉. InAs/GaSbⅡ类超晶格与HgCdTe红外探测器的比较研究[J].红外技术,2012,34(12):683.
 YU Lian-jie,DENG Gong-rong,SU Yu-hui. Comparison of TypeⅡ InAs/GaSb Superlattices and HgCdTe Infrared Detectors[J].Infrared Technology,2012,34(01):683.
[12]曾戈虹.p-on-n HgCdTe红外探测器机理分析与性能计算[J].红外技术,2013,35(05):249.[doi:10.118346/hwjs201305001]
 ZENG Ge-hong.Fundamentals of p-on-n HgCdTe Infrared Detectors and Their Detectivity Calculations[J].Infrared Technology,2013,35(01):249.[doi:10.118346/hwjs201305001]
[13]曾戈虹.HgCdTe艰辛的历程、辉煌的成就:一、伟大的发明[J].红外技术,2011,33(05):249.
 ZENG Ge-hong.The Arduous Journey and Brilliant Achievements of HgCdTe: 1. Great Invention[J].Infrared Technology,2011,33(01):249.
[14]曹扬,金伟其,王霞,等.短波红外焦平面探测器及其应用进展[J].红外技术,2009,31(2):063.
 CAO Yang,JIN Wei-qi,WANG Xia,et al.Development in Shortwave Infrared Focal Plane Array and Application[J].Infrared Technology,2009,31(01):063.
[15]栗兴良,牛春晖,马牧燕,等.10.6 um激光辐照碲镉汞红外探测器热损伤研究[J].红外技术,2016,38(1):006.[doi:10.11846/j.issn.1001_8891.201601002]
 LI Xingliang,NIU Chunhui,MA Muyan,et al.Research on the Thermal Damage of HgCdTe Infrared Detector under Laser Irradiation of 10.6 um Wavelength[J].Infrared Technology,2016,38(01):006.[doi:10.11846/j.issn.1001_8891.201601002]
[16]范永杰,秦强.激光辐照HgCdTe探测器输出特性与软损伤判定[J].红外技术,2020,42(9):829.[doi:10.11846/j.issn.1001_8891.202009003]
 FAN Yongjie,QIN Qiang.HgCdTe Detector Output Characteristics and Soft Damage Determination under Laser Irradiation[J].Infrared Technology,2020,42(01):829.[doi:10.11846/j.issn.1001_8891.202009003]

更新日期/Last Update: 2013-10-14