[1]曾戈虹.红外光子探测器与热探测器性能分析[J].红外技术,2011,33(09):497-500.
 ZENG Ge-hong.Comparison of Infrared Photon and Thermal Detectors[J].Infrared Technology,2011,33(09):497-500.
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红外光子探测器与热探测器性能分析
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《红外技术》[ISSN:1001-8891/CN:CN 53-1053/TN]

卷:
33卷
期数:
2011年09期
页码:
497-500
栏目:
出版日期:
2013-10-16

文章信息/Info

Title:
Comparison of Infrared Photon and Thermal Detectors
文章编号:
1001-8891(2011)09-0497-04
作者:
曾戈虹
昆明物理研究所,云南 昆明 650223
Author(s):
ZENG Ge-hong
Kunming Institute of Physics, Kunming 650223, China
关键词:
红外探测器光子探测器热探测器物理机理理论计算
Keywords:
infrared detectorphoton detectorDevice Physics ModelTheoretical calculation
分类号:
TN215
文献标志码:
A
摘要:
根据红外探测器最基本的物理机理和器件模型,对红外光子探测器和热探测器在不同工作温度、不同波长的探测率性能进行了理论计算;并对两类物理机理不同的红外探测器的探测率、工作温度和响应波长进行比较,阐述了各自探测器具有优势的应用领域。
Abstract:
Based on the principles of infrared photon and thermal detectors, device performances were calculated in terms of detectivity versus background temperatures or/and device temperatures. The characteristics and applications for the two kinds of the detectors are also discussed.

参考文献/References:

[1] ?J. Piotrowski, A. Rogalski. High-operating-temperature infrared photodetectors[M]. SPIE Press, 2007.
[2] ?A. Rogalski. Infrared Detectors: 2nd[M]. CRC Press, 2010.
[3] ?S. M. Sze. Physics of Semiconductor Devices[M]. New York: Wiley Interscience, 1969.
[4] ?J. I. Pankove. Optical Properties of Semiconductors[M]. New York: Dover, 1971.
[5] ?M. Henini, M. Razeghi. Handbook of Infrared Detection Technologies[M]. Elsevier, 2002.?

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备注/Memo

备注/Memo:
收稿日期:2011-08-10 .
作者简介:曾戈虹,博士,研究方向为红外探测器材料与器件

更新日期/Last Update: 2013-10-30