[1]曾戈虹,史衍丽,庄继胜.Ⅱ类超晶格红外探测器的机理、现状与前景[J].红外技术,2011,33(06):311-314.
 ZENG Ge-hong,SHI Yan-li,ZHUANG Ji-sheng.Principles, Status and Prospect of Type Ⅱ Superlattice Infrared Detectors[J].Infrared Technology,2011,33(06):311-314.
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Ⅱ类超晶格红外探测器的机理、现状与前景
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《红外技术》[ISSN:1001-8891/CN:CN 53-1053/TN]

卷:
33卷
期数:
2011年06期
页码:
311-314
栏目:
出版日期:
2013-10-16

文章信息/Info

Title:
Principles, Status and Prospect of Type Ⅱ Superlattice Infrared Detectors
文章编号:
1001-8891(2011)06-0311-04
作者:
曾戈虹史衍丽庄继胜
昆明物理研究所,云南 昆明 650223
Author(s):
ZENG Ge-hongSHI Yan-liZHUANG Ji-sheng
Kunming Institute of Physics, Kunming 650223, China
关键词:
Ⅱ类超晶格Ⅰ类超晶格碲镉汞红外探测器
Keywords:
Type Ⅱ superlatticeType I superlatticeHgCdTeInfrared detector
分类号:
TN215
文献标志码:
A
摘要:
近年来,锑基Ⅱ类超晶格红外探测器受到特别的关注,主要原因在于:锑化物Ⅱ类超晶格材料可能具有与碲镉汞相当的红外材料特性。根据Ⅱ类超晶格材料的基本特性、能带结构与电子空穴物理分离机理、美国3个主力联合研究团队的攻关现状,对Ⅱ类超晶格材料、器件的难点与前景进行分析。
Abstract:
Recently, the Antimony based type Ⅱ superlattice detectors have attracted much attention, for it is believed that this kind of material may show similar properties to the state-of-the-art HgCdTe. The principles, status and prospect of the type Ⅱ superlattice detectors are reviewed based on the material band structure, special separation features for electrons and holes in the superlattices, and the research results from the three major American research teams. ??

参考文献/References:

[1] ?M. Razeghi. Fundamentals of Solid State Engineering[M]. 3rd: Springer, 2009.
[2] ?M. A. Kinch. Fundamentals of Infrared Detector Materials[M]. SPIE Press, 2007.
[3] ?G. A. Sai-Halasz, Tsu, R., and Esaki, L.. A new semiconductor superlattice[J]. Applied Physics Letters, 1977, 30: 651-653.
[4] ?G. A. Sai-Halasz, L. Esaki. InAs-GaSb superlattice energy structure and its semiconductor-semimetal trnsition[J]. Phys. Rev. B, 1978, 18: 2812-2818.
[5] ?S. Terterian, B. Nosho, H. Sharifi, et al. Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors[C]//Proceedings of the SPIE, 2010: 76601O.
[6] ?D. R. Rhiger, R. E. Kvaas, S. F. Harris, et al. Characterization of barrier effects in superlattice LWIR detectors[C]//Proceedings of the SPIE, 2010, 7660: 76601N,.
[7] ?M. Razeghi, E. K.-w. Huang, B.-M. Nguyen, et al. Type-Ⅱ Antimonide-based Superlattices for the Third Generation Infrared Focal Plane Arrays[C]//Proceedings of the SPIE, 2010, 7660: 76601F,

相似文献/References:

[1]余连杰,邓功荣,苏玉辉. InAs/GaSbⅡ类超晶格与HgCdTe红外探测器的比较研究[J].红外技术,2012,34(12):683.
 YU Lian-jie,DENG Gong-rong,SU Yu-hui. Comparison of TypeⅡ InAs/GaSb Superlattices and HgCdTe Infrared Detectors[J].Infrared Technology,2012,34(06):683.
[2]史衍丽,余连杰,田亚芳.InAs/(In)GaSbⅡ类超晶格红外探测器研究现状[J].红外技术,2007,29(11):621.
 SHI Yan-li,YU Lian-jie,TIAN Ya-fang.Development Status of InAs/(In)GaSb Ⅱ-Type Super-Lattice Infrared Detector[J].Infrared Technology,2007,29(06):621.

备注/Memo

备注/Memo:
收稿日期:2011-05-19.
作者简介:曾戈虹(1956-),男,广东兴宁人,博士,研究方向:红外探测器材料与器件。

更新日期/Last Update: 2013-12-29