[1]蒋大钊,丁瑞军.Ge量级大满阱容量脉冲频率调制电路设计[J].红外技术,2019,41(7):666-671.[doi:10.11846/j.issn.1001_8891.201907012]
 JIANG Dazhao,DING Ruijun.Design of Pulse Frequency Modulation Circuit with Full Capacity at Ge-Level[J].Infrared Technology,2019,41(7):666-671.[doi:10.11846/j.issn.1001_8891.201907012]
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Ge量级大满阱容量脉冲频率调制电路设计
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《红外技术》[ISSN:1001-8891/CN:CN 53-1053/TN]

卷:
41卷
期数:
2019年第7期
页码:
666-671
栏目:
出版日期:
2019-07-20

文章信息/Info

Title:
Design of Pulse Frequency Modulation Circuit with Full Capacity at Ge-Level
文章编号:
TN215
作者:
蒋大钊12丁瑞军1
1. 中国科学院上海技术物理研究所 中国科学院红外成像材料与器件重点实验室;
2. 中国科学院大学

Author(s):
JIANG Dazhao12DING Ruijun1
1. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics,
Chinese Academy of Sciences; 2. University of Chinese Academy of Sciences

关键词:
大电荷容量脉冲频率调制读出电路
Keywords:
high charge capacitypulse frequency modulationROIC
分类号:
TN215
DOI:
10.11846/j.issn.1001_8891.201907012
文献标志码:
A
摘要:
本文对一种提高红外焦平面读出电路满阱电荷容量的方法进行了研究。采用了基于脉冲频率调制结构的单元电路,与传统电路相比满阱电荷容量提高了1~2个量级。本文对该像元的电路结构、工作原理与信号误差进行了分析。单元电路前端的调制器将光电流信号调制成一系列固定频率的脉冲信号,计数器记录脉冲个数,脉冲个数与输入的光电流信号成正比,通过脉冲个数来表征光电流的信号量。使用0.35 ?m 2P4M工艺进行了电路设计与验证。通过测试结果表明,最大电荷容量达到了3.5 Ge,每个电荷包的电荷量为5.46 ke,该方法的电荷容量提高了2个量级。
Abstract:
This study investigates a method for improving the full well charge capacity of an infrared focal plane array readout circuit. The unit circuit based on the pulse frequency modulation structure is adopted. Compared with the traditional circuit, the full well charge capacity is increased by one to two orders of magnitude. The circuit structure, working principle, and signal error of the pixel are analyzed in this study. The modulator of the front end of the unit circuit modulates the photocurrent signal into a series of fixed frequency pulse signals. The counter records the number of pulses, which is proportional to the input photocurrent. A number of pulses is used to characterize the semaphore of the photocurrent. The circuit design and verification are carried out using the 0.35 ?m 2P4M process. The test results show that the maximum charge capacity is 3.5 Ge, and the charge of each charge pack is 5.46 ke. The charge capacity of this method increases by two orders of magnitude.

参考文献/References:

[1] Schultz K I, Kelly M W, Baker J J, et al. Digital-pixel focal plane array technology[J]. Lincoln Laboratory Journal, 2014, 20(2): 36-51.
[2] 白丕绩, 姚立斌. 第三代红外焦平面探测器读出电路[J]. 红外技术, 2015, 37(2): 89-96.
BAI Piji, YAO Libin. Read Out Integrated Circuit for Third-Generation Infrared Focal Plane Detector[J]. Infrared Technology, 2015, 37(2): 89-96.?
[3]? 王忆锋, 陆剑鸣. 向数字化发展的红外焦平面列阵[J]. 红外技术, 2013, 35(4): 195-201.
WANG Yifeng, LU Jianming. Toward Digitization in Infrared Focal Plane Array[J]. Infrared Technology, 2013, 35(4): 195-201.?
[4] Rogalski A, Martyniuk P, Kopytko M. Challenges of small-pixel infrared detectors: a review[J]. Reports on Progress in Physics, 2016, 79(4): 046501.
[5] Kayahan H, Yazici M, Ceylan ?, et al. A new digital readout integrated circuit (DROIC) with pixel parallel A/D conversion and reduced quantization noise[J]. Infrared Physics & Technology, 2014, 63: 125-132.
[6] Guellec F, Peizerat A, Tchagaspanian M,et al.A 25um pitch LWIR focal plane array with pixel-level 15-bit ADC providing high well capacity and targeting 2mK NETD[C]//SPIE Defense, Security, and Sensing. International Society for Optics and Photonics, 2010: 76603T-76603T-10.
[7] Bisotto S, De Borniol E, Mollard L, et al. A 25μm pitch LWIR staring focal plane array with pixel-level 15-bit ADC ROIC achieving 2mK NETD[C]//Security+ Defence. International Society for Optics and Photonics, 2010: 78340J-78340J-11.

备注/Memo

备注/Memo:
收稿日期:2018-10-28;修订日期:2019-05-09.
作者简介:蒋大钊(1987-),男,博士研究生,主要从事红外焦平面读出电路的研究。 E-mail:j-dazhao@163.com。
通信作者:丁瑞军(1964-),男,研究员,博士生导师,主要从事集成电路设计、红外光电器件及物理、分析和评价技术等方面的研究。
E-mail:dingrj@mail.sitp.ac.cn。

更新日期/Last Update: 2019-07-12