[1]郝子恒,李相鑫,张妮,等.微通道板高增益二次电子发射层制备研究[J].红外技术,2018,40(11):1077-1080.[doi:10.11846/j.issn.1001_8891.201811010]
 HAO Ziheng,LI Xiangxin,ZHANG Ni,et al.Preparation of High Gain Secondary Electron Emission Layer for Micro-channel Plate[J].Infrared Technology,2018,40(11):1077-1080.[doi:10.11846/j.issn.1001_8891.201811010]
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微通道板高增益二次电子发射层制备研究
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《红外技术》[ISSN:1001-8891/CN:CN 53-1053/TN]

卷:
40
期数:
2018年第11期
页码:
1077-1080
栏目:
出版日期:
2018-11-21

文章信息/Info

Title:
Preparation of High Gain Secondary Electron Emission Layer for Micro-channel Plate

文章编号:
1001-8891(2018)11-1077-04
作者:
郝子恒12李相鑫12张妮12朱宇峰12李丹12
1. 微光夜视技术重点实验室;2. 昆明物理研究所
Author(s):
HAO Ziheng12LI Xiangxin12ZHANG Ni12ZHU Yufeng12LI Dan12
1. Science and Technology on Low-Light-Level Night Vision Laboratory;
2. Kunming Institute of Physics

关键词:
原子层沉积微通道板二次电子发射层
Keywords:
atomic layer depositionmicro-channel platesecondary electron emission layer
分类号:
O484.1
DOI:
10.11846/j.issn.1001_8891.201811010
文献标志码:
A
摘要:
提高微通道板(Micro-channel Plate,MCP)的综合性能一直都是器件使用性能提升首要解决的关键问题。纳米薄膜材料的发展及其制备技术的成熟为微通道板性能提升提供了契机,使用原子层沉积(Atomic Layer Deposition,ALD)技术,在微通道板的通道内壁生长一层Al2O3薄膜作为高二次电子发射层,以增强通道内壁的二次电子发射能力,从而提升微通道板的增益性能。通过调节ALD沉积过程中的循环数,腔室反应温度和前驱体反应时间,分析工艺条件改变对MCP二次电子增益的影响。结果表明ALD沉积工艺参数对MCP二次电子增益有很大影响,使用适当的工艺参数,可得到具有高二次电子增益的MCP。
Abstract:
The overall performance of the MCP is always a key issue for device performance enhancements. Development of nano-film materials and mature preparation technology provide an excellent opportunity for the development of micro-channel plate. A layer of Al2O3 thin film was fabricated on the inner wall of MCP by ALD as the secondary electron emission layer. It can increase the secondary electron emission coefficient of channel walls, and the gain of micro-channel plate. The effect of different process conditions on the electron gain of MCP was analyzed by adjusting cycles, temperatures and reaction time of the ALD deposition process. The results show that the ALD process parameters have a great influence on the electron gain of MCP, and the MCP with high electron gain can be obtained by using the appropriate process parameters.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2017-10-26;修订日期:2018-11-06.
作者简介:郝子恒(1990-),男,工程师,主要从事微通道板应用技术方面的研究。E-mail:sky619902303@gmail.com。

更新日期/Last Update: 2018-11-20