[1]李云涛,张 舟,丁颜颜,等.InAs/GaSb Ⅱ类超晶格长波红外焦平面探测器[J].红外技术,2019,41(8):731-734.[doi:10.11846/j.issn.1001_8891.201908007]
 LI Yuntao,ZHANG Zhou,DING Yanyan,et al.InAs/GaSb Type Ⅱ Superlattice Long-wave Infrared Detector[J].Infrared Technology,2019,41(8):731-734.[doi:10.11846/j.issn.1001_8891.201908007]
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InAs/GaSb Ⅱ类超晶格长波红外焦平面探测器
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《红外技术》[ISSN:1001-8891/CN:CN 53-1053/TN]

卷:
41卷
期数:
2019年第8期
页码:
731-734
栏目:
出版日期:
2019-08-21

文章信息/Info

Title:
InAs/GaSb Type Ⅱ Superlattice Long-wave Infrared Detector
文章编号:
1001-8891(2019)08-0731-04
作者:
李云涛张 舟丁颜颜杨 煜雷华伟汪良衡谭必松张传杰刘 斌周文洪
武汉高芯科技有限公司,湖北 武汉 430205
Author(s):
LI YuntaoZHANG ZhouDING YanyanYANG YuLEI HuaweiWANG LianghengTAN Bisong ZHANG ChuanjieLIU BinZHOU Wenhong
Wuhan Global Sensor Technology Limited Corporation, Wuhan 430205, China
关键词:
InAs/GaSb II类超晶格640×512长波红外焦平面探测器
Keywords:
InAs/GaSb type Ⅱ superlattice 640?512 long-wave infrared focal plane arrays
分类号:
TN215
DOI:
10.11846/j.issn.1001_8891.201908007
文献标志码:
A
摘要:
 Since 2014, the Global Sensor Technology(GST) has been manufacturing long-wave infrared (LWIR) detectors based on InAs/GaSb type-II superlattices (T2SL). In this paper, we report 640´512 long-wave focal plane arrays(FPAs )with 15 mm pitch. At 77 K, the 50% cut-off wavelength of the device was 10.5  mm, peak quantum efficiency was 38.6%, noise equivalent temperature(NETD) was 26.2 mK, which is obtained with f/2 optics and 0.4 ms integration time, and operability was 99.71%. With the use of technologies such as MBE and mature III-V chip, this study successfully verified the feasibility of localization and mass production in long-wave bands of more than 10 mm, using superlattices instead of HgCdTe.
Abstract:
 Since 2014, the Global Sensor Technology(GST) has been manufacturing long-wave infrared (LWIR) detectors based on InAs/GaSb type-II superlattices (T2SL). In this paper, we report 640´512 long-wave focal plane arrays(FPAs )with 15  mm pitch. At 77 K, the 50% cut-off wavelength of the device was 10.5 
 mm, peak quantum efficiency was 38.6%, noise equivalent temperature(NETD) was 26.2 mK, which is obtained with f/2 optics and 0.4 ms integration time, and operability was 99.71%. With the use of technologies such as MBE and mature III-V chip, this study successfully verified the feasibility of localization and mass production in long-wave bands of more than 10  mm, using superlattices instead of HgCdTe.

参考文献/References:

[1] Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. J. Appl. Phys., 1987, 62(6):2545-2548.
[2] Youngdale E R, Meyer J R, Hoffman C A, et al. Auger lifetime enhancement in InAs/GaInSb superlattices[J]. Appl. Phys. Lett., 1994, 64(23):3160-3162.
[3] Tennant W E. “Rule07” revisited: still a good heuristic predictor of p/n HgCdTe photodiode performance?[J]. Electron. Mater., 2010, 39(7): 1030-1035.
[4] Ting D Z-Y, Hill C J, Soibel A. A high-performance long wavelength superlattice complementary barrier infrared detector[J]. Appl. Phys. Lett , 2009, 95: 023508.
[5] Vurgaftman I, Aifer E H, Canedy C L. W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency[J]. Appl. Phys. Lett , 2006, 89: 053519.
[6] Vurgaftman I, Aifer E H, Canedy C L. Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes[J]. Appl. Phys. Lett , 2006, 89: 12111.
[7] Nguyen B M, Razeghi M. Type–II “M” structure photodides: an alternative material design for mid-wave to long wavelength infrared regimes[C]//Quantum sensing and Nanophotonic Devices VII, 2007, 6479: 64790S1-0S10.

相似文献/References:

[1]刘宁,陈钱,顾国华,等.640×512红外焦平面探测器前端噪声分析及抑制技术[J].红外技术,2010,32(10):572.
 LIU Ning,CHEN Qian,GU Guo-hua,et al.The Noise Analysis and Inhibition Technology of the Driving Circuitsof the 640×512 IR Focal Plane Detector[J].Infrared Technology,2010,32(8):572.

备注/Memo

备注/Memo:
收稿日期:2017-08-18;修订日期:2018-02-12.
作者简介:李云涛(1988-),男,湖北武汉人,硕士研究生,主要从事红外探测器芯片的研究,E-mail:yuntao_li@126.com。
更新日期/Last Update: 2019-08-20