[1]曾戈虹.p-on-n HgCdTe红外探测器机理分析与性能计算[J].红外技术,2013,35(05):249-258.[doi:10.118346/hwjs201305001]
 ZENG Ge-hong.Fundamentals of p-on-n HgCdTe Infrared Detectors and Their Detectivity Calculations[J].Infrared Technology,2013,35(05):249-258.[doi:10.118346/hwjs201305001]
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p-on-n HgCdTe红外探测器机理分析与性能计算
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《红外技术》[ISSN:1001-8891/CN:CN 53-1053/TN]

卷:
35卷
期数:
2013年05期
页码:
249-258
栏目:
出版日期:
2013-05-20

文章信息/Info

Title:
Fundamentals of p-on-n HgCdTe Infrared Detectors and Their Detectivity Calculations
文章编号:
1001-8891(2013)05-0249-10
作者:
?曾戈虹
昆明物理研究所
Author(s):
?ZENG Ge-hong
?Kunming Institute of Physics
关键词:
p-on-nHgCdTe器件模型理论计算红外探测器高性能红外系统
Keywords:
p-on-nHgCdTedevice modelingtheoretical calculationinfrared detectorhigh-end infrared system
分类号:
TN215
DOI:
10.118346/hwjs201305001
文献标志码:
A
摘要:
?

根据HgCdTe材料特性和p-on-n HgCdTe红外探测器结构,建立了p-on-n HgCdTe红外探测器三维数理模型。通过对三维理论模型的求解,得到探测器内部载流子的输运特性,实现了对不同波段、不同工作温度p-on-n HgCdTe红外探测器探测率的理论计算。计算结果表明:p-on-n HgCdTe红外探测器优异的高灵敏度和高温特性,能在红外短波、中波和长波3个波段上全面满足未来红外系统对高性能红外探测器的需求。

Abstract:
?

Based on the properties of HgCdTe materials and the physics of the p-on-n HgCdTe detector, a 3-D theoretical

detector modeling and calculation were carried out. The p-on-n HgCdTe detector performances in short, middle and long wavelengths were calculated in terms of detectivity versus device working temperatures with cut-off response at 3, 5, and 10.5 um, respectively. The results show that the performance of p-on-n HgCdTe detectors can meet the requirements of future high-end infrared system for high sensitivity and high working temperature detectors in all short, middle and long wavelengths.

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备注/Memo

备注/Memo:
收稿日期:2013-05-12;修订日期:2013-05-14.
作者简介:曾戈虹(1956-),博士,研究员,研究方向:红外探测器材料与器件。
更新日期/Last Update: 2013-05-21