[1]胡彦博,李煜,白丕绩,等. 77K低温下MOSFET非固有电容参数提取研究[J].红外技术,2013,35(01):009-15.
 HU Yan-bo,LI Yu,BAI Pi-ji,et al.Parameter Extraction of Extrinsic Capacitance of MOSFET at 77K Cryogenic Temperature[J].Infrared Technology,2013,35(01):009-15.
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 77K低温下MOSFET非固有电容参数提取研究
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《红外技术》[ISSN:1001-8891/CN:CN 53-1053/TN]

卷:
35卷
期数:
2013年01期
页码:
009-15
栏目:
出版日期:
2013-01-31

文章信息/Info

Title:
Parameter Extraction of Extrinsic Capacitance of MOSFET at 77K Cryogenic Temperature
文章编号:
1001-8891(2013)01-0009-07
作者:
 胡彦博李煜白丕绩李敏刘会平李所英
昆明物理研究所
Author(s):
HU Yan-boLI YuBAI Pi-jiLI MinLIU Hui-pingLI Suo-yin
Kunming Institute of Physics
关键词:
77K低温MOSFET非固有电容参数提取
Keywords:
77K cryogenicMOSFETextrinsic capacitanceparameter extraction
分类号:
TN215
文献标志码:
A
摘要:
77K低温参数是制冷型碲镉汞红外焦平面探测器读出电路设计与精确仿真的关键点之一。通过研究MOSFET非固有电容的特性,并基于BSIM3通用模型对电容的描述,在77K低温下进行测试提取,得到了相关的模型参数。嵌入SPICE软件仿真对比,证明了参数的准确性。
Abstract:
Cryogenic parameter in 77K is a key point of cooled MCT infrared detector readout IC design. This paper is a research of characteristic of extrinsic capacitance in MOSFET. Based on the description of capacitance in BSIM3 model, the parameters are measured and extracted at cryogenic temperature. And the parameters are proved accurate by simulate in SPICE.

参考文献/References:

[1] 拉扎维. 模拟CMOS集成电路设计[M]. 陈贵灿, 程军, 张瑞智, 等译. 西安: 西安交通大学出版社, 2003: 142-145.
[2] Martin Patrick, Guellec Fabrice. MOSFET Modeling for Simulation, Design and Optimization of Infrared CMOS Image Sensors Working at Cryogenic Temperature[C]//MIXDES 2011, 18th International Conference "Mixed Design of Integrated Circuits and Systems", 2011: 16-18,
[3] Yeh Wen-Kuan, Ku Chao-Ching, Chen Shuo-Mao, et al. Effect of Extrinsic Impedance and Parasitic Capacitance on Figure of Merit of RF MOSFET[J]. IEEE transactions on electron devices, 2005, 52(9): 2054-2060.
[4] 甘学温, 黄如, 刘晓彦, 等. 纳米CMOS器件[M]. 北京: 科学出版社: 2004.
[5] 刘恩科, 朱秉升, 罗晋生, 等. 半导体物理[M]?7版. 北京: 电子工业出版社, 2008: 252-253.
[6] Akturk Akin, Allnutt Jeffrey, Dilli Zeynep, et al. Device Modeling at Cryogenic Temperatures: Effects of Incomplete Ionization[J]. IEEE transactions on electron devices, 2007, 54(11): 2984-2990.

备注/Memo

备注/Memo:

收稿日期:2012-10-26.
作者简介:胡彦博(1987-),男,在读硕士研究生,研究方向:红外焦平面读出电路设计。



更新日期/Last Update: 2013-02-01