[1]王健,刘辰,朱泓遐,等.nBn InAsSb/AlAsSb中波红外探测器的设计[J].红外技术,2019,41(5):400-404.[doi:10.11846/j.issn.1001_8891.201905002]
 WANG Jian,LIU Chen,ZHU Hongxia,et al.Design of nBn InAsSb/AlAsSb MWIR Detectors[J].Infrared Technology,2019,41(5):400-404.[doi:10.11846/j.issn.1001_8891.201905002]
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nBn InAsSb/AlAsSb中波红外探测器的设计
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《红外技术》[ISSN:1001-8891/CN:CN 53-1053/TN]

卷:
41卷
期数:
2019年第5期
页码:
400-404
栏目:
出版日期:
2019-05-20

文章信息/Info

Title:
Design of nBn InAsSb/AlAsSb MWIR Detectors
文章编号:
1001-8891(2019)05-0400-05
作者:
王健12刘辰12朱泓遐12曾辉12杨雪艳12史衍丽12
1. 云南大学 物理与天文学院;
2. 云南大学 量子信息重点实验室
Author(s):
WANG Jian12LIU Chen12ZHU Hongxia12ZENG Hui12YANG Xueyan12SHI Yanli12
1. School of Physics and Astronomy, Yunnan University;?
2. Key Lab of Quantum Information of Yunnan Province, Yunnan University

关键词:
锑化物nBn中波红外探测器输运特性
Keywords:
InAsSb bariodesnBnMWIRcarrier transportation
分类号:
TN215
DOI:
10.11846/j.issn.1001_8891.201905002
文献标志码:
A
摘要:
对nBn势垒型InAsSb/AlAsSb中波红外探测器材料进行了系统深入的理论研究。通过理论计算势垒层的厚度、组分和掺杂等结构参数对器件能带结构、暗电流和光电流的影响,分析了势垒性的温度特性、器件输运特性,揭示了nBn势垒型中波红外探测器高温工作的机制,探索降低器件暗电流的方法。完成nBn势垒型锑化物材料系统的优化设计,为高温工作的锑化物中波红外探测器研制提供理论基础和支持。
Abstract:
Medium wavelength infrared (MWIR)-based nBn InAsSb/AlAsSb detectors, also referred to as bariodes are theoretically and systematically examined in this study. The heterojunction barrier height between the active regions of the barrier has a decisive influence on hole transportation and the dark current. The thickness, composition, doping in the barrier layer, and the doping in the absorption layer were calculated pointing out the optimal structure parameter design and lower dark current. The results obtained from the theoretical analysis are significant for the development of InAsSb/AlAsSb high operating temperature MWIR detectors.

参考文献/References:

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相似文献/References:

[1]胡锐,邓功荣,张卫锋,等.nBn型InAs/GaSb Ⅱ类超晶格红外探测器光电特性研究[J].红外技术,2014,36(11):863.[doi:10.11846/j.issn.1001_8891.201411002]
 HU Rui,DENG Gong-rong,ZHANG Wei-feng,et al.Electrical and Optical Properties of nBn Based on Type-II InAs-GaSb Strained Layer Superlattice Infrared Detectors [J].Infrared Technology,2014,36(5):863.[doi:10.11846/j.issn.1001_8891.201411002]

备注/Memo

备注/Memo:
收稿日期:2019-03-21;修订日期:2019-05-04.
作者简介:王健(1995-),男,硕士研究生,研究方向为半导体光电探测器研究。E-mail:jianwang@mail.ynu.edu.cn。
通信作者:史衍丽(1969-),女,山东郓城人,研究员,博士生导师,研究方向为半导体光电器件物理与器件研究。E-mail:ylshikm@hotmail.com。
基金项目:国家自然基金项目(61751502)、云南省重点基金(K1070022)、云南省重大科技项目(2018ZI002)。

更新日期/Last Update: 2019-05-17