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小像元10 μm中心距红外焦平面读出电路设计

吴圣娟 姚立斌 李东升 姬玉龙 杨春丽 李红福 罗敏 李敏 许睿涵

吴圣娟, 姚立斌, 李东升, 姬玉龙, 杨春丽, 李红福, 罗敏, 李敏, 许睿涵. 小像元10 μm中心距红外焦平面读出电路设计[J]. 红外技术, 2021, 43(9): 902-909.
引用本文: 吴圣娟, 姚立斌, 李东升, 姬玉龙, 杨春丽, 李红福, 罗敏, 李敏, 许睿涵. 小像元10 μm中心距红外焦平面读出电路设计[J]. 红外技术, 2021, 43(9): 902-909.
WU Shengjuan, YAO Libin, LI Dongsheng, JI Yulong, YANG Chunli, LI Hongfu, LUO Min, LI Min, XU Ruihan. Small Pixel 10 μm Pitch Infrared Focal Plane Array ROIC Design[J]. Infrared Technology , 2021, 43(9): 902-909.
Citation: WU Shengjuan, YAO Libin, LI Dongsheng, JI Yulong, YANG Chunli, LI Hongfu, LUO Min, LI Min, XU Ruihan. Small Pixel 10 μm Pitch Infrared Focal Plane Array ROIC Design[J]. Infrared Technology , 2021, 43(9): 902-909.

小像元10 μm中心距红外焦平面读出电路设计

详细信息
    作者简介:

    吴圣娟(1984-),女,硕士研究生,主要研究方向:红外焦平面探测器读出电路设计。 E-mail:275099355@qq.com

    通讯作者:

    姚立斌(1968-),男,云南石屏人,研究员,博士,博士生导师,主要研究方向为混合信号集成电路设计。 E-mail: libin.yao@ieee.org

  • 中图分类号: TN214

Small Pixel 10 μm Pitch Infrared Focal Plane Array ROIC Design

  • 摘要: 研制出一款小像元10 m中心距红外焦平面探测器CMOS(complementary metal oxide semiconductor)读出电路ROIC(read out integrated circuit)。读出电路设计包括积分后读出(integration then reading,ITR)和积分同时读出(integration while reading,IWR)模式,ITR模式下有2档增益,电荷满阱容量分别为4.3 Me-和1.6 Me-,其他功能包括抗晕、串口功能控制以及全芯片电注入测试功能。读出电路采用0.18 m工艺,电源电压3.3 V,测试结果表现出良好的性能:在77 K条件下,全帧频100 Hz,读出电路噪声小于0.2 mV。本文介绍了该款读出电路设计的基本架构,分析了在小的积分电容下电路抗干扰能力的设计。在测试过程中,发现了盲元拖尾现象,分析了拖尾现象产生的原因,为解决拖尾现象设计了抗晕管栅压产生电路,最后给出了整个电路的测试结果。
  • 图  1  读出电路结构示意图

    Figure  1.  Schematic diagram of readout circuit structure

    图  2  模拟链路设计原理图

    Figure  2.  Schematic diagram of analog design

    图  3  IWR模式像元开关时序图

    Figure  3.  Sequence diagram of IWR mode pixel switch

    图  4  ITR模式像元开关时序图

    Figure  4.  Sequence diagram of ITR mode pixel switch

    图  5  保持电容与开关连接图

    Figure  5.  Connection diagram of holding capacitor and switch

    图  6  像元总线

    Figure  6.  Pixel bus

    图  7  行选开关位置1

    Figure  7.  Location 1 of row selection switch

    图  8  行选开关位置2

    Figure  8.  Location 2 of row selection switch

    图  9  列总线仿真原理图

    Figure  9.  Schematic diagram of column bus simulation

    图  10  馈通效应仿真时序

    Figure  10.  Feed through effect simulation timing

    图  11  亮盲元拖尾现象

    Figure  11.  Bright blind element tailing phenomenon

    图  12  拖尾现象分析

    Figure  12.  Analysis of tailing phenomenon

    图  13  抗晕管栅极电压设计示意图

    Figure  13.  Schematic diagram of antiblooming voltage design

    图  14  抗晕管电压产生电路

    Figure  14.  Antiblooming voltage generation circuit

    图  15  小像元探测器组件成像图

    Figure  15.  Imaging of small pixel detector assembly

    表  1  法国Sofradir公司推出的Daphnis产品信息

    Table  1.   Daphnis product information by Sofradir

    Detector spectral
    response
    3.7-4.8 μm
    FPA operating
    temperature
    Up to 110 K
    ROIC architecture Digital outputs
    Direct injection input circuit
    ROIC functionalities Programmable integration time
    anti-blooming
    Invertrevert
    Bining
    IWR or ITR
    High dynamic range
    Windowing modes 320×4 minimum programmable
    Charge handling
    capacity
    3main
    Gains: 1.1Me-; 2.7Me-; 5.6Me-
    Frame rate Up to 85 Hz full frame rate
    NETD 20 mK(293 K, 70% well fill, 2.7Me-)
    下载: 导出CSV

    表  2  读出电路主要性能参数

    Table  2.   Main performance parameters of readout circuit

    Parameters Typical value
    Array 1024×768
    Pixel pitch 10μm
    Main clock 10 MHz
    Charge capacity Gain1:4.3 Me-
    Gain0:1.6Me-
    Output channel 8
    Output voltage swing 2 V(1-3 V)
    Readout mode ITR/IWR
    下载: 导出CSV

    表  3  沟道电荷注入效应引起的电压变化

    Table  3.   Voltage change caused by channel charge injection effect

    C/fF ΔV/mV
    800 7.925
    400 15.85
    200 31.7
    100 63.4
    50 126.8
    10 634
    下载: 导出CSV

    表  4  列放大器对保持电容影响

    Table  4.   Effect of column amplifier on holding capacitance

    C/fF ΔV/mV ΔV'/mV
    10 629.77 21.75
    40 347.35 8.32
    80 204.18 2.26
    100 165.81 1.91
    400 43.42 0.56
    800 21.88 0.29
    下载: 导出CSV

    表  5  读出电路测试结果

    Table  5.   Read out circuit test result

    IWR/ITR function Normal
    Window mode test Normal
    Serial electrical interface Normal
    Output voltage swing 2 V
    Power dissipation 150 mW
    Output bandwidth 10 MHz
    Frame rate 100 Hz
    Noise 0.2 mV
    下载: 导出CSV
  • [1] 杨超伟, 李东升, 李立华, 等. 小像元碲镉汞红外焦平面探测器的研究进展[J]. 红外技术, 2019, 41(11): 1003-1011. https://www.cnki.com.cn/Article/CJFDTOTAL-HWJS201911003.htm

    YANG Chaowei, LI Dongsheng, LI Lihua, et al. Review of small-pixel HgCdTe infrared focal plane detector[J]. Infrared Technology, 2019, 41(11): 1003-1011. https://www.cnki.com.cn/Article/CJFDTOTAL-HWJS201911003.htm
    [2] 李俊斌, 李东升, 杨玉林, 等. 以色列SCD公司的III-Ⅴ族红外探测器研究进展[J]. 红外技术, 2018, 40(10): 936-945. http://hwjs.nvir.cn/article/id/hwjs201810003

    LI Junbin, LI Dongsheng, YANG Yulin, et al. III-V semiconductor infrared detector research in SCD of Israel[J]. Infrared Technology, 2018, 40(10): 936-945. http://hwjs.nvir.cn/article/id/hwjs201810003
    [3] 邓功荣, 赵鹏, 袁俊, 等. 锑基高工作温度红外探测器研究进展[J]. 红外技术, 2017, 39(9): 780-784. http://hwjs.nvir.cn/article/id/hwjs201709002

    DENG Gongrong, ZHAO Peng, YUAN Jun, et al. Status of Sb-based HOT infrared detectors[J]. Infrared Technology, 2017, 39(9): 780-784. http://hwjs.nvir.cn/article/id/hwjs201709002
    [4] Beletic J W, Blank R, Gulbransen D, et al. Teledyne imaging sensors: infrared imaging technologies for astronomy and civil space[C]//High Energy, Optical, and Infrared Detectors for Astronomy III, 2008, 7021: 70210H.
    [5] Rogalski A. Recent progress in infrared detector technologies[J]. Infrared Physics & Technology, 2011, 54(3): 136-154. http://www.researchgate.net/profile/Antoni_Rogalski/publication/241112884_Recent_progress_in_HgCdTe_infrared_detector_technology/links/5524e12e0cf22e181e73b04e.pdf
    [6] Rogalski A. Next decade in infrared detectors[C]//Electro-Optical and Infrared Systems: Technology and Applications XIV, 2017, 10433: 104330L.
    [7] Caulfield J, Curzan J. Small pixel infrared sensor technology[C]//Infrared Technology and Applications XLIII, 2017, 10177: 1017725.
    [8] Chen T, Catrysse P B, El Gamal A, et al. How small should pixel size be?[C]//Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, 2000, 3965: 451-459.
    [9] Farrell J, Xiao F, Kavusi S. Resolution and light sensitivity tradeoff with pixel size[C]//Digital Photography II, 2006, 6069: 60690N.
    [10] Lutz H, Breiter R, Eich D, et al. Small pixel pitch MCT IR-modules[C]//Infrared Technology and Applications XLII, 2016, 9819: 98191Y.
    [11] Lutz H, Breiter R, Eich D, et al. Towards ultra-small pixel pitch cooled MW and LW IR-modules[C]//Infrared Technology and Applications XLIV, 2018, 10624: 106240B.
    [12] Espuno L, Pacaud O, Reibel Y, et al. A new generation of small pixel pitch/SWaP cooled infrared detectors[C]//Electro-Optical and Infrared Systems: Technology and Applications XII, 2015: 9648: 96480H.
    [13] Manissadjian A, Rubaldo L, Rebeil Y, et al. Improved IR detectors to swap heavy systems for SWaP[C]//Infrared Technology and Applications XXXVIII, 2012, 8353: 835334.
    [14] Johnson John. Analysis of image forming systems[C]//Proceeding of SPIE- The International Society for Optical Engineering, 1958, 513(513) : 761.
    [15] 周立庆, 宁提, 张敏, 等. 10 µm像元间距1024×1024中波红外探测器研制进展[J]. 激光与红外, 2019, 49(8): 915-920. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201908002.htm

    ZHOU L, NING T, ZHANG M, et al. Developments of 10 µm pixel pitch 1024×1024 MW infrared detectors[J]. Laser & Infrared, 2019, 49(8): 915-920. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201908002.htm
    [16] Berthoz J, Rubaldo L, Maillard M, et al. MTF performance: measurements, modelisation, and optimization for Sofradir II-VI IR photodetectors[C]//Quantum Sensing and Nanophotonic Devices XII, 2015, 9370: 93700O.
    [17] Reibel Y, Augey T, Verdet S, et al. High-performance and long-range cooled IR technologies in France[C]//Infrared Technology and Applications XXXIX, 2013, 8704: 87040B.
    [18] Reibel Y, Rubaldo L, Manissadjian A, et al. High-performance MCT and QWIP IR detectors at Sofradir[C]//Electro-Optical and Infrared Systems: Technology and Applications IX, 2012, 8541: 85410A.
    [19] Reibel Y, Rouvie A, Nedelcu A, et al. Large format, small pixel pitch and hot detectors at SOFRADIR[C]//Electro-Optical and Infrared Systems: Technology and Applications X, 2013, 8896: 88960B.
    [20] Lefoul X, Pere-Laperne N, Augey T, et al. New SOFRADIR 10 µm pixel pitch infrared products[C]//Electro-Optical and Infrared Systems: Technology and Applications XI, 2014, 9249: 924911.
    [21] Tan C L, Mohseni H. Emerging technologies for high performance infrared detectors[J]. Nanophotonics, 2018, 7(1): 169-197. http://www.onacademic.com/detail/journal_1000040103679310_e3b6.html
    [22] Beletic J W, Blank R, Gulbransen D, et al. Teledyne imaging sensors: infrared imaging technologies for astronomy and civil space[C]//High Energy, Optical, and Infrared Detectors for Astronomy III, 2008: 70210H.
    [23] Dorn R J, Eschbaumer S, Hall D N, et al. Evaluation of the Teledyne SIDECAR ASIC at cryogenic temperature using a visible hybrid H2RG focal plane array in 32 channel readout mode[C/]//Proc. of SPIE, 2008: DOI:10.1117/12.788717.
    [24] Bai Y, Bajaj J, Beletic J W, et al. Teledyne imaging sensors: silicon CMOS imaging technologies for x-ray, UV, visible, and near infrared[C]//Proc. of SPIE, 2008, 7021: 702102.
    [25] 毕查德·拉扎维. 模拟CMOS集成电路设计[M]. 西安: 西安交通大学出版社, 2003.

    Behzad Razavi. Design of Analog CMOS Integrated Circuits[M]. Xi'an: Xi'an JiaoTong University Press, 2003.
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出版历程
  • 收稿日期:  2021-07-26
  • 修回日期:  2021-09-02
  • 刊出日期:  2021-09-20

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