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高工作温度红外探测器的研究进展及趋势

张坤杰

张坤杰. 高工作温度红外探测器的研究进展及趋势[J]. 红外技术, 2021, 43(8): 766-772.
引用本文: 张坤杰. 高工作温度红外探测器的研究进展及趋势[J]. 红外技术, 2021, 43(8): 766-772.
ZHANG Kunjie. Research Progress and Trends of High Operating Temperature Infrared Detectors[J]. Infrared Technology , 2021, 43(8): 766-772.
Citation: ZHANG Kunjie. Research Progress and Trends of High Operating Temperature Infrared Detectors[J]. Infrared Technology , 2021, 43(8): 766-772.

高工作温度红外探测器的研究进展及趋势

详细信息
    作者简介:

    张坤杰(1986-),女,硕士,主要从事国外科技信息研究等工作。E-mail: kunjie.zhang@aliyun.com

  • 中图分类号: TN215

Research Progress and Trends of High Operating Temperature Infrared Detectors

  • 摘要: 基于高工作温度探测器的热成像系统的典型特征是体积小、重量轻、功耗低,其性能在降低成本的同时与低温制冷型热成像系统的性能相当,有着重要的应用价值和批量生产的前景。本文介绍势垒型探测器的结构特点,阐述构建势垒型探测器的材料结构类型与其对系统性能的影响,总结其他相关技术实现的高温探测器。最后对势垒型探测器目前的研究进展进行归纳,提出了几个高温探测器技术未来的研究方向。
  • 图  1  nBn势垒型结构的禁带示意图

    Figure  1.  Bandgap diagram of nBn barrier

    图  2  nBn结构的各种电流成分的空间构成和势垒阻挡

    Figure  2.  Spatial makeup of the various current components and barrier blocking

    图  3  标准PN结探测器和XBn探测器中暗电流温度依赖性的对比,标准PN结探测器暗电流的扩散限和产生-复合限部分做了标记

    Figure  3.  A comparison of temperature dependence of the dark current in standard p-n detector and XBn detector, the diffusion and G-R limited portions of the dark current in p-n detector are labeled

    图  4  Lynred公司研制的Daphnis高清中波红外IDCA组件[25]

    Figure  4.  Daphnis-HD MWIR IDCA developed by the Lynred[25]

    图  5  AIM公司研制的HiPIR-1280M中波红外IDCA组件[28]

    Figure  5.  HiPIR -1280M MWIR IDCA developed by the AIM[28]

    图  6  AIM公司研制的紧凑型高温HiPIR HgCdTe IDCA组件[29]

    Figure  6.  HiPIR HOT HgCdTe compact IDCA developed by the AIM[29]

  • [1] Lior Shkedy, Maya Brumer, Philip Klipstein, et al. Development of 10 μm pitch XBn detector for low SWaP MWIR applications[C]//Proc. of SPIE, Infrared Technology and Applications XLⅡ, 2016, 9819: 98191D(doi: 10.1117/12.2220395).
    [2] Lutz H, Breiter R, Eich D, et al. High operating temperature IR-modules with small pitch for SWaP reduction and high performance applications[C]//Proc. of SPIE, Electro-Optical and Infrared Systems: Technology and Applications Ⅷ, 2011, 8185: 818504(doi: 10.1117/12.900347).
    [3] Lutz H, Breiter R, Figgemeier H, et al. Improved high operating temperature MCT MWIR modules[C]//Proc. of SPIE, Infrared Technology and Applications XL, 2014, 9070: 90701D(doi: 10.1117/12.2050427).
    [4] Rogalski A, Martyniuk P. Mid-Wavelength infrared nBn for HOT detectors[J]. Journal of Electronic Materials, 2014, 43(8): 2963-2969. doi:  10.1007/s11664-014-3161-y
    [5] Philip Klipstein, Olga Klin, Steve Grossman, et al. "XBn" barrier detector for high operating temperatures[C]//Proc. of SPIE, Quantum Sensing and Nanophotonic Devices Ⅶ, 2010, 7608: 1-10.
    [6] Philip Klipstein, Olga Klin, Steve Grossman, et al. High operating temperature XBn-InAsSb bariode detectors[C]//Proc. of SPIE, Quantum Sensing and Nanophotonic Devices IX, 2012, 8268: 1-8.
    [7] Philip Klipstein. "XBn" Barrier photodetectors for high sensitivity and high operating temperature infrared sensors[C]//Proc. of SPIE, Infrared Technology and Applications XXXIV, 2008, 6940: 1-12.
    [8] Philip Klipstein, Olga Klin, Steve Grossman, et al. MWIR InAsSb XBn detectors for high operating temperatures[C]//Proc. of SPIE, Infrared Technology and Applications XXXVI, 2010, 7660: 76602Y(doi: 10.1117/12.849503).
    [9] David Z Ting, Alexander Soibel, Cory J Hill, et al. High operating temperature midwave quantum dot barrier infrared detector (QD-BIRD)[C]//Proc. of SPIE, Infrared Technology and Applications XXXⅧ, 2012, 8353: 835332 (doi: 10.1117/12.920685).
    [10] David Z Ting, Alexander Soibel, Arezou Khoshakhlagh, et al. Carrier transport in nBn infrared detectors[C]// Proc. of SPIE, Infrared Remote Sensing and Instrumentation XXIV, 2016, 9973: 997304 (doi: 10.1117/12.2238853).
    [11] Kopytko M, Jóźwikowski K, Martyniuk P, et al. Status of HgCdTe barrier infrared detectors grown by MOCVD in military university of technology[J]. Journal of Electronic Materials, 2016, 45(9): 4563-4573. doi:  10.1007/s11664-016-4702-3
    [12] Philip Klipstein, Olga Klin, Steve Grossman, et al. MWIR InAsSb XBnn detector (bariode) arrays operating at 150 K[C]//Proc. of SPIE, Infrared Technology and Applications XXXⅦ, 2011, 8012: 80122R(doi: 10.1117/12.883238).
    [13] 邓功荣, 赵鹏, 袁俊, 等. 锑基高工作温度红外探测器研究进展[J]. 红外技术, 2017, 39(9): 780-784. http://hwjs.nvir.cn/article/id/hwjs201709002

    DENG Gongrong, ZHAO Peng, YUAN Jun, et al. Status of Sb-based HOT infrared detectors[J]. Infrared Technology, 2017, 39(9): 780-784. http://hwjs.nvir.cn/article/id/hwjs201709002
    [14] Philip Klipstein, Gross Y, Aronov D, et al. Low SWaP MWIR detector based on XBn Focal plane array Proc. of SP. IE[C]//Infrared Technology and Applications XXXIX, 2013, 87041: 1-12.
    [15] Philip Klipstein, Olga Klin, Steve Grossman, et al. XBn barrier photodetectors based on InAsSb with high operating temperatures[C]//Optical Engineering, 2011, 50(6): doi: 10.1117/ 1.3572149.
    [16] Amy W K, LIU Dmitri Lubyshev, QIU Yueming, et al. MBE growth of Sb-based bulk nBn infrared photodetector structures on 6-inch GaSb substrates[C]//Proc. of SPIE, Infrared Technology and Applications XLI, 2015, 9451: 94510T(doi: 10.1117/12.2178122).
    [17] Dmitri Lubyshev, Joel M Fastenau, QIU Yueming, et al. MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates[C]// Proc. of SPIE, Infrared Technology and Applications XXXIX, 2013, 8704: 870412(doi: 10.1117/12.2019039).
    [18] Yoram Karni, Eran Avnon, Michael Ben Ezra, et al. Large format 15μm pitch XBn detector[C]//Proc. of SPIE, Infrared Technology and Applications XL, 2014, 9070: 90701F(doi: 10.1117/12.2049691).
    [19] Gershon G, Avnon E, Brumer M, et al. 10μm pitch family of InSb and XBn detectors for MWIR imaging[C]//Proc. of SPIE, Infrared Technology and Applications XLⅢ, 2017, 10177: 101771I(doi: 10.1117/12.2261703).
    [20] DAT-CON Defence. Multi-sensor-units[M/OL]. [2019-03-06]. https://www.dat-con-defence.com/wp-content/uploads/2020/01/Multi-sensor-units_2020_compressed.pdf.
    [21] Müller R, Gramich V, Wauro M, et al. High operating temperature InAs/GaSb type-Ⅱ superlattice detectors on GaAs substrate for the long wavelength infrared[J]. Infrared Physics and Technology, 2019, 96: 141-144. doi:  10.1016/j.infrared.2018.10.019
    [22] Philip Klipstein, Avnon E, Benny Y, et al. InAs/GaSb Type Ⅱ superlattice barrier devices with a low dark current and a high-quantum efficiency[C]//Proc. of SPIE, Infrared Technology and Applications XL, 2014, 9070: 90700U(doi: 10.1117/12.2049825).
    [23] Martyniuk P, Hackiewicz K, Rutkowski J, et al. Ultimate performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb longwave photodetectors for high operating temperature condition[J]. Journal of Electronic Materials, 2019, 48(10): 6093-6098. doi:  10.1007/s11664-019-07398-x
    [24] Manijeh Razeghi. Sb-based 3rd generation imagers at center for quantum devices[C]//Proc. SPIE, Infrared Technology and Applications XLVI, 2020: doi: 10.1117/12.2564813.
    [25] 周立庆, 宁提, 张敏, 等. 10 μm像元间距1024×1024中波红外探测器研制进展[J]. 激光与红外, 2019, 49(8): 915-920. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201908002.htm

    ZHOU Liqing, NING Ti, ZHANG Min, et al. Developments of 10 μm pixel pitch 1024×1024 MW infrared detectors[J]. Laser and Infrared, 2019, 49(8): 915-920. https://www.cnki.com.cn/Article/CJFDTOTAL-JGHW201908002.htm
    [26] 张坤杰. 国外三代红外探测器制冷机的研究现状[J]. 云光技术, 2020, 52(1): 28-37.

    ZHANG Kunjie. The research status of the third generation infrared detectors in foreign countries[J]. YUN GUANG JI SHU, 2020, 52(1): 28-37.
    [27] Lynred. DAPHNIS-HD MW[M/OL][2019-11-20]. http://www.lynred.com/sites/default/files/2019-10/Daphnis-HD-MW-datasheet.pdf.
    [28] AIM Infrarot-Module GmbH. HiPIR-1280M-MCT MWIR 1280×1024 15 μm Pitch IDCA[M/OL][2019-03-09]. http://www.aim-ir.com/fileadmin/files/Data_Sheets_Security/Modules/02_MWIR_IDCA/HiPIR1280M/2018_AIM_datenblatt_A4_HiPIR-1280M_engl.pdf.
    [29] AIM Infrarot-Module GmbH. HiPIR-Engine HOT MCT 1024×768 10μm PITCH IR ENGINE[M/OL][2019-03-09]. http://www.Aim-ir.com/fileadmin/files/Data_Sheets_Security/Modules/01_HotCube/2018_AIM_datenblatt_A4_HOT-MCT-1024_engl.pdf.
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出版历程
  • 收稿日期:  2020-08-03
  • 修回日期:  2020-09-02
  • 刊出日期:  2021-08-20

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