Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes
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摘要: 雪崩光电二极管(Avalanche Photondiode,APD)是一种常用于激光探测领域的光敏元件。本文针对盖革模式雪崩光电二极管(Geiger Mode-Avalanche Photondiode,Gm-APD)工作时发生的雪崩效应,设计了一种场效应管淬灭电路(Field Effect Transistor Quenching Circuit)。首先,针对Gm-APD器件的特性建立了Gm-APD的电学模型。其次,在此模型的基础上,设计并仿真验证了场效应管淬灭电路,实现了对Gm-APD的快速淬灭。结果表明,本文设计的场效应管淬灭电路淬灭速度快、死时间短、性能较优,淬灭时间和死时间分别为21.026 ns和16.5 ns,满足激光测距成像的应用需求。Abstract: The avalanche photodiode (APD) is a photosensitive component commonly used in devices employed in the field of laser detection. In this study, a field-effect transistor quenching circuit is designed for a Geiger-mode (Gm)-avalanche photodiode for detecting avalanche effects. First, a circuit model of a Gm-APD was established based on the characteristics of a traditional Gm-APD device. Second, based on this model, afield-effect transistor quenching circuit was simulated to confirm the rapid quenching of the Gm-APD. Results indicated that the field-effect transistor quenching circuit in this study exhibited a high quenching speed, a short dead time, and improved performance. The quenching and death times were 21.026 and 16.5 ns, respectively, which meet the application requirements of laser ranging imaging.
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Key words:
- Geiger mode /
- APD /
- field effect transistor quenching circuit /
- laser ranging imaging
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表 1 淬灭时间比较
Table 1. Quenching time comparison
Quenching mode Quenching time/ns Dead time/ns Passive quenching 1231 422.4 Active quenching 52.2 20 Field effect transistor quenching 21.026 16.5 -
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