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雪崩光电二极管过剩噪声的测量和抑制方法

李再波 李云雪 马旭 田亚芳 史衍丽

李再波, 李云雪, 马旭, 田亚芳, 史衍丽. 雪崩光电二极管过剩噪声的测量和抑制方法[J]. 红外技术, 2022, 44(4): 343-350.
引用本文: 李再波, 李云雪, 马旭, 田亚芳, 史衍丽. 雪崩光电二极管过剩噪声的测量和抑制方法[J]. 红外技术, 2022, 44(4): 343-350.
LI Zaibo, LI Yunxue, MA Xu, TIAN Yafang, SHI Yanli. Measurement and Suppression Method for Excess Noise in Avalanche Photodiodes[J]. Infrared Technology , 2022, 44(4): 343-350.
Citation: LI Zaibo, LI Yunxue, MA Xu, TIAN Yafang, SHI Yanli. Measurement and Suppression Method for Excess Noise in Avalanche Photodiodes[J]. Infrared Technology , 2022, 44(4): 343-350.

雪崩光电二极管过剩噪声的测量和抑制方法

基金项目: 

云南大学研究生科研创新基金项目 2020290

云南省重大科技项目 2018ZI002

详细信息
    作者简介:

    李再波(1997-),男,湖南永州人,硕士研究生,研究方向为半导体光电探测器研究。E-mail:zaiboli_yun@163.com

    通讯作者:

    田亚芳(1978-),女,湖北赤壁人,实验师,研究方向为半导体光电材料与器件。E-mail:xntyf@sohu.com

    史衍丽(1969-),女,山东郓城人,研究员,博士生导师,研究方向为半导体光电器件物理与器件研究。E-mail:ylshikm@hotmail.com

  • 中图分类号: TN215

Measurement and Suppression Method for Excess Noise in Avalanche Photodiodes

  • 摘要: 雪崩光电二极管(APD)因为其高灵敏度和高增益带宽的优势已被广泛应用在高比特率、远程光纤通信系统中,而雪崩过程中产生的过剩噪声直接影响到APD的信噪比,因此,研究过剩噪声对APD性能的提升具有重要意义。目前,国内外测试雪崩光电二极管过剩噪声的方法主要有直接功率测量法和相敏探测法,本文对这两种测试方法和其优缺点进行了分析,并介绍了最新的改进测试思路。同时,还总结了降低过剩噪声的3种方法:选择低碰撞电离系数比的材料,降低倍增层厚度和采用APD碰撞电离工程来降低噪声。
  • 图  1  相敏探测法噪声测试系统

    Figure  1.  Phase-sensitive detection method noise test system

    图  2  GaAs PIN二极管的M-F曲线[3]

    Figure  2.  M-F curves of GaAs PIN diode[3]

    图  3  不同厚度Si PIN APDs的M-F曲线[11]

    Figure  3.  M-F curves of Si PIN APD with different thicknesses[11]

    图  4  光功率衰减10-2.3的AlInP雪崩二极管的M-F曲线[12]

    Figure  4.  M-F curve of the AlInP avalanche diode under optical power attenuates by 10−2.3[12]

    图  5  直接功率测量噪声系统[4]

    Figure  5.  Direct power measurement noise system[4] Excessive noise factor, F

    图  6  APD的F与增益的关系[16]

    Figure  6.  The relationship between F and gain of APD[16]

    图  7  Ge/Si SACM APD的平面示意图和横截面图[18]

    Figure  7.  Schematic cross section of Ge on Si SACM APD[18]

    图  8  Ge/Si APD的碰撞电离系数比k[18]

    Figure  8.  Collision ionization coefficient ratio k of Ge/Si APD[18]

    图  9  Al0.7In0.3As0.3Sb0.7 SAGCM APD的横截面示意图和电场分布[19]

    Figure  9.  Schematic diagram of the cross-section and electric field distribution of the Al0.7In0.3As0.3Sb0.7 SAGCM APD[19]

    图  10  AlInAsSb APD的碰撞电离系数比k[19]

    Figure  10.  Collision ionization coefficient ratio k of AlInAsSb APD[19]

    图  11  常用半导体材料的碰撞电离系数比k[21]

    Figure  11.  Collision ionization coefficient ratio k of common semiconductor materials[21]

    图  12  GaAs APD不同倍增层厚度的k[22]

    Figure  12.  Collision ionization coefficient ratio k of GaAs APD with different multiplication layer thicknesses[22]

    图  13  两种模型模拟不同倍增层厚度的k[23]

    Figure  13.  Two models to simulate the k value of different multiplication layer thicknesses[23]

    图  14  制造的InAlAs/InGaAs I2E APD的示意图[27]

    Figure  14.  Schematic diagram of the fabricated InAlAs/InGaAs I2E APD[27]

    图  15  串联I2E InAlAs/InGaAs APD能带图[28]

    Figure  15.  Series I2E InAlAs/InGaAs APD band diagram[28]

    图  16  模拟串联I2E InAlAs/InGaAs APD的k[28]

    Figure  16.  Simulation of k value of series I2E InAlAs/InGaAs[28]

    图  17  单级APD和串联APD的模拟增益带宽积[28]

    Figure  17.  Simulated gain-bandwidth product of single-stage APD and series APD[28]

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出版历程
  • 收稿日期:  2021-07-12
  • 修回日期:  2021-07-29
  • 刊出日期:  2022-04-20

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